Related papers: Negative differential resistance in nanotube devic…
Quantum transport properties of intermolecular nanotube contacts are investigated. We find that atomic structure in the contact region plays important roles and resistance of contacts varies strongly with geometry and nanotube chirality.…
We have carried out calculations of electron transport through a metal-molecule-metal junction with metal nanoclusters taking the part of electrodes. We show that negative differential resistance peaks could appear in the current-voltage…
A current constrained approach is proposed to calculate negative differential conductance in molecular nano-junctions. A four-site junction is considered where a steady-state current is forced by inserting only the two central sites within…
The features of the $IV$ characteristics of metallic carbon nanotubes (m-NTs) in different experimental setups are studied using semi-classical Boltzmann transport equation together with the heat dissipation equation to account for…
Negative differential conductivity (NDC) is a widely exploited effect in modern electronic components. Here, a proof-of-principle is given for the observation of NDC in a quantum transport device for neutral atoms employing a multi-mode…
We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects.…
We study the low-energy electronic properties of a junction made of two crossed metallic carbon nanotubes of general chiralities. We derive a tight binding tunneling matrix element that couples low-energy states on the two tubes, which…
The magnetoconductance of p-n junctions formed in clean single wall carbon nanotubes is studied in the noninteracting electron approximation and perturbatively in electron-electron interaction, in the geometry where a magnetic field is…
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were…
We have calculated the effects of structural distortions of armchair carbon nanotubes on their electrical transport properties. We found that the bending of the nanotubes decreases their transmission function in certain energy ranges and…
We study theoretically the electron transport properties in carbon nanotubes under the influence of an external electric field E(t) using Boltzmann's equation. The current-density equation is derived. Negative differential conductivity is…
A suspended, doubly clamped single wall carbon nanotube is characterized as driven nano-electromechanical resonator at cryogenic temperatures. Electronically, the carbon nanotube displays small bandgap behaviour with Coulomb blockade…
Multiwalled carbon nanotubes are shown to be ballistic conductors at room temperature, with mean free paths of the order of tens of microns. These experiments follow and extend the original experiments by Frank et al (Science, 280 1744…
We report low temperature transport measurements on suspended single walled carbon nanotubes (both individual tubes and ropes). The technique we have developed, where tubes are soldered on low resistive metallic contacts across a slit,…
An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon…
Carbon nanotubes are excellent nano-electromechanical systems, combining high resonance frequency, low mass, and large zero-point motion. At cryogenic temperatures they display high mechanical quality factors. Equally they are outstanding…
We have calculated current-voltage characteristic curves for normal-superconducting junctions with Andreev reflections and different types of electronic bands. We found that when the normal band is narrow, of the order of the…
The ability to tune the thermal resistance of carbon nanotube mechanical supports from insulating to conducting could permit the next generation of thermal management devices. Here, we demonstrate fabrication techniques for carbon nanotube…
Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with…
Owing to their sensitivity to temperature fluctuations, normal metal-insulator-superconductor (NIS) junctions are leveraged in various thermal devices. This study illustrates that two NISIN reservoirs can achieve a measurable negative…