Related papers: Epitaxial Graphenes on Silicon Carbide
We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality…
Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a…
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However,…
This article presents a review of epitaxial graphene on silicon carbide, from fabrication to properties, put in the context of other forms of graphene.
Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exceed standard semiconducting materials. Currently…
We introduce a kinetic model for the growth of epitaxial graphene on 6H-SiC. The model applies to vicinal surfaces composed of half-unit-cell height steps where experiment shows that step flow sublimation of SiC promotes the formation and…
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on…
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct…
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication…
Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene.…
We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their…
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures…
The vibrational properties of semiconducting graphene buffer layer epitaxially grown on hexagonal silicon carbide are determined using first-principles calculations on a realistic structural model. Despite the important chemical and…
We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…
We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits…
In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…
We present an orbital-resolved density functional theory study on the electronic properties of hydrogen and lithium intercalated graphene grown on the Si face of SiC. Starting from the $(6\sqrt3\times6\sqrt3)R30^{\circ}$ surface…
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal…
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the…
We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first…