Related papers: Sinusoidal Frequency Doublers Circuit With Low Vol…
Present semiconductor research is increasingly focusing on either higher speeds or higher linearity or both. Applications range from consumer, industrial, healthcare and military. Typically such circuits are fabricated in today's…
In this paper, we address the problem of stability and frequency regulation of a recently proposed inverter. In this type of inverter, the DC-side capacitor emulates the inertia of a synchronous generator. First, we remodel the dynamics…
We report here the first realization of top-down silicon nanowires (SiNW) transduced by both junction-less field effect transistor (FET) and the piezoresistive (PZR) effect. The suspended SiNWs are among the smallest top-down SiNWs reported…
We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…
Fractional topological insulators are electronic systems that carry fractionally charged excitations, conserve charge and are symmetric to reversal of time. In this review we introduce the basic essential concepts of the field, and then…
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties…
This paper proposes a low-power and low-noise instrumentation amplifier (IA) tailored for bioimpedance sensing applications. The design originates from a gain-boosted flipped voltage follower (FVF) transconductance (TC) stage and integrates…
Interface circuits are the key components that enable the hybrid integration of superconductor and semiconductor digital electronics. The design requirements of superconductor-semiconductor interface circuits vary depending on the…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
This paper presents an extensive framework focused on the control design, along with stability and performance analysis, of Grid-Following Inverters (GFL). It aims to ensure their effective operation under both stiff and weak grid…
Compact inductor-capacitor (LC) resonators, in contrast to coplanar waveguide (CPW) resonators, have a simple lumped-element circuit representation but usually call for sophisticated finite-element method (FEM) simulations for an accurate…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
Sinusoidal excitation is particularly popular for testing structures in the nonlinear regime. Due to the nonlinear behavior and the inevitable feedback of the structure on the exciter, higher harmonics in the applied excitation are…
A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further…
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be…
An ultra-low-voltage crystal quartz oscillator is proposed. The approach to its design is essentially based on using a HEMT operating in unsaturated dc regime and a quartz resonator as a resonant impedance transformer. The 25 MHz prototype…
Frequency Domain Multiplexed detector arrays constructed of superconducting Transition Edge Sensors in the current-summing configuration suffer from the finite impedance of the summing node which should ideally be zero. We suggest two…
In this paper analysis is given to find the third order intermodulation power given sinusoids are fed into a nonlinear device. A simple expression of the third order intermodulation power is given for the case that the center frequencies of…
This paper describes an effective frequency doubler scheme for SASE free electron lasers. It consists of an undulator tuned to the first harmonic, a dispersion section, and a tapered undulator tuned to the second harmonic. The first stage…
We demonstrate a phase-selective and colorless quantum receiver assisted by a silicon-on-insulator microring, enabling a low 1.3% QBER at 5.3kb/s secure-key rate. No penalty incurs compared to a delay interferometer. BiCMOS 3D-integration…