Related papers: Catalyst preparation for CMOS-compatible silicon n…
The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon…
Iron silicon oxide nanowire has been synthesized by putting single crystalline Si(100) wafer into ammonium iron sulfate, hydrogen peroxide, and triethylamine solution heated to from 70 to 100 degree in the air. The prepared iron silicon…
In this chapter, silicon nanowires that are compatible with CMOS fabrication processes have been described. It has been shown that these nanowires can be functionalized by conjugating monoclonal antibodies to their surface in order to build…
Three different catalysts (Fe, Ni, Co nitrates dissolved in ethanol) were patterned on a SiO2/Si substrate and multi-wall carbon nanotubes were grown by catalytic decomposition of acetylene. We compare the growth of the carbon…
We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the…
Silicon microelectronics, consisting of complementary metal oxide semiconductor (CMOS) technology, have changed nearly all aspects of human life from communication to transportation, entertainment, and healthcare. Despite the widespread and…
The observation that the thermal conductivity of single-crystalline silicon nanowires with diameter on the length scale of 25 nm is lower than that of bulk material by two orders of magnitude has attracted the interest onto silicon as a…
At millimeter dimension or less, the conventional bonding technology in electronic assembly relies heavily on reflow soldering and suffers from severe performance and reliability degradation. Meanwhile, the traditional high temperature…
The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise…
We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…
A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by…
Metal selenide nanocrystals have attracted attention as promising materials in photovoltaics and thermoelectrics. However, the expensive and labor-intensive synthesis methods utilized for the production of these nanomaterials have impeded…
The ability to manufacture nanomaterials with complex and structured composition using otherwise incompatible materials increasingly underpins the next generation of technologies. This is translating into growing efforts integrating a wider…
Superconducting nanowires can be fabricated by decomposition of an organometallic gas using a focused beam of Ga ions. However, physical damage and unintentional doping often results from the exposure to the ion beam, motivating the search…
We present the fabrication of metallic magnetic nanowires using a low temperature chemical process. We show that pressed powders and magnetically oriented samples exhibit a very high coercivity (6.5 kOe at 140 K and 4.8 kOe at 300 K). We…
This investigation deals with the effect of growth temperature on the growth behavior of Fe filled multiwalled carbon nanotubes (MWCNTs). Carbon nanotube (CNT) synthesis was carried out in a thermal chemical vapor deposition (CVD) reactor…
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires,…
We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By…
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new…
Nano-electro-opto-mechanical systems enable the synergistic coexistence of electrical, mechanical, and optical signals on a chip to realize new functions. Most of the technology platforms proposed for the fabrication of these systems so far…