Related papers: Electronic and Level Statistics Properties of Si/S…
Second order perturbation theory and a Lipkin-Nogami scheme combined with an exact Monte Carlo projection after variation are applied to compute the ground-state energy of $6\le N\le 210$ electron-hole pairs confined in a parabolic…
We study a 2D mesoscopic ring with an anisotropic effective mass considering surface quantum confinement effects. Consider that the ring is defined on the surface of a cone, which can be controlled topologically and mapped to the 2D ring in…
We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantum-dot heterostructures (QDHs) in Burt's envelope-function representation. The 8x8 radial Hamiltonian and the boundary conditions for the Schroedinger equation are…
We have considered a system consisting of two coupled quantum dots containing two electrons, i.e., two quantum dots next to each other with one excess electron each, subjected to an uniform magnetic field perpendicular to the quantum dots…
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers.…
We develop a semiclassical density functional theory in the context of quantum dots. Coulomb blockade conductance oscillations have been measured in several experiments using nanostructured quantum dots. The statistical properties of these…
The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron…
It is shown that the low-energy spin states of double quantum dots (DQD) with even electron occupation number $N$ possess the symmetry SO(4) similar to that of a rigid rotator familiar in quantum mechanics (rotational spectra of H$_2$…
We compute the ground state energy of atoms and quantum dots with a large number N of electrons. Both systems are described by a non-relativistic Hamiltonian of electrons in a d-dimensional space. The electrons interact via the Coulomb…
We find an analytical expression for the conductance of a single electron transistor in the regime when temperature, level spacing, and charging energy of a grain are all of the same order. We consider the model of equidistant energy levels…
The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…
We consider an effective mass model for an electron-hole pair in a simplified confinement potential, which is applicable to both a nanoscopic self-assembled semiconducting InAs ring and a quantum dot. The linear optical susceptibility,…
Rydberg excitons are the solid-state analog of Rydberg atoms and can, e.g., for cuprous oxide, easily reach a large size in the region of $\mu$m for principal quantum numbers up to $n=25$. The fabrication of quantum well-like structures in…
We study the electronic structure of a Pauli paramagnetic compound, La(2)CoSi(3) using photoemission spectroscopy and ab initio band structure calculations. Experimental valence band spectra exhibit signature of electron correlation induced…
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied…
We investigate the entanglement properties in semiconductor quantum dot systems modeled by extended Hubbard model, focusing on the impact of potential energy variations and electron interactions within a four-site quantum dot spin chain.…
We consider circular and elliptic quantum dots with parabolic external confinement, containing 0 - 22 electrons and with values of r_s in the range 0 < r_s < 3. We perform restricted and unrestricted Hartree-Fock calculations, and further…
We study theoretically the electron states in a system of two vertically stacked quantum dots. We investigate the influence of the geometrical symmetry breaking (caused by the displacement as well as the ellipticity of the dots) on the…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…
We measure the electron escape-rate from surface-acoustic-wave dynamic quantum dots (QDs) through a tunnel barrier. Rate-equations are used to extract the tunnelling rates, which change by an order of magnitude with tunnel-barrier gate…