Related papers: Electronic and Level Statistics Properties of Si/S…
Exchange interaction has been studied for electrons in coupled quantum dots (QD's) by a configuration interaction method using confinement potentials with different profiles. The confinement potential has been parametrized by a two-centre…
Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
Energy spectra, spin configurations, and entanglement characteristics of a system of four electrons in lateral double quantum dots are investigated using exact diagonalization (EXD), as a function of interdot separation, applied magnetic…
Spin properties of two interacting electrons in a quantum dot (QD) embedded in a nanowire with controlled aspect ratio and longitudinal magnetic fields are investigated by using a configuration interaction (CI) method and exact…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
The energy spectrum and corresponding wave functions of a flat quantum dot with elliptic symmetry are obtained exactly. A detailed study is made of the effect of ellipticity on the energy levels and the corresponding wave functions. The…
A numerical study is made of the spectra of a tight-binding hamiltonian on square approximants of the quasiperiodic octagonal tiling. Tilings may be pure or random, with different degrees of phason disorder considered. The level statistics…
We discuss the properties of few electrons and electron-hole pairs confined in coupled semiconductor quantum dots, with emphasis on correlation effects and the role of tunneling. We shall discuss, in particular, exact diagonalization…
In this paper, we present a mathematical approach in estimating transition energy of type-I core-shell quantum dots (CSQDs) in strong and weak confinement of charge carriers within the core materials. We will do this by using effective-mass…
We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of…
We study the spectral properties of electron quantum dots (QDs) confined in 2D parabolic harmonic oscillator influenced by external uniform electrical and magnetic fields together with an Aharonov-Bohm (AB) flux field. We use the…
The time independent Schoedinger equation for two electrons confined in a parabolic external potential is solved. Developing this solution in terms of a dimensionless variable it is demonstrated that parameterization of the strength of the…
A model of the non-concentric spherical core-shell quantum dot under the influence of an externally applied electric field was proposed. It was established that the energy spectrum of both the electron and the hole depends on the intensity…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
We calculate exactly, using finite size techniques, the quantum mechanical and many-body effects to the self-capacitance of a spherical quantum dot in the regime of extreme confinement, where the radius of the sphere is much smaller than…
We report calculations for electronic ground states of parabolically confined quantum dots for up to 30 electrons based on the quantum Monte Carlo method. Effects of the electron-electron interaction and the response to a magnetic field are…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
In this paper we continue our development of a dimensional perturbation theory (DPT) treatment of N identical particles under quantum confinement. DPT is a beyond-mean-field method which is applicable to both weakly and strongly-interacting…