Related papers: Dependence of quantum-Hall conductance on the edge…
In the recent years many researches were performed about graphene. Graphene is always considered a half metal or a zero gap semiconductor. In the last year new experiments were done about graphene on boron nitride and they obtained an…
We analyze the single particle states at the edges of disordered graphene quantum dots. We show that generic graphene quantum dots support a number of edge states proportional to circumference of the dot over the lattice constant. Our…
The current flow along the boundary of graphene stripes in a perpendicular magnetic field is studied theoretically by the nonequilibrium Green's function method. In the case of specular reflections at the boundary, the Hall resistance shows…
Remarkable recent experiments on the moir\'e structure formed by pentalayer rhombohedral graphene aligned with a hexagonal Boron-Nitride substrate report the discovery of a zero field fractional quantum hall effect. These "(Fractional)…
Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at…
An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order…
Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called…
We study a continuum model of the interface of graphene and vacuum in the quantum hall regime via sign-problem-free quantum Monte Carlo, allowing us to investigate the interplay of topology and strong interactions in a graphene quantum Hall…
The miniaturization of quantum Hall resistance standards (QHRS) using epitaxial graphene on silicon carbide necessitates understanding how device dimensions impact performance. This study reveals a pronounced scale-dependent carrier density…
For a sample of an arbitrary shape, the dependence of its conductance on the longitudinal and Hall conductivity is identical to that of a rectangle. We use analytic results for a conducting rectangle, combined with the semicircle model for…
We study clean, edge-contacted graphene/superconductor interfaces in both the quantum Hall (QH) and zero field regimes. We find that Andreev reflection is substantially stronger than at an interface with a semiconductor two-dimensional…
Application of a perpendicular magnetic field to charge neutral graphene is expected to result in a variety of broken symmetry phases, including antiferromagnetic, canted and ferromagnetic. All these phases open a gap in bulk but have very…
We consider a coupled system of Dirac operators that models spin- and valley-polarized gated rhombohedral graphene (RHG) with an arbitrary number of layers. We classify all quantum anomalous Hall phases that are compatible with the model…
The electronic states of a finite-width graphene sheet in the presence of an electrostatic confining potential and a perpendicular magnetic field are investigated. The confining potential shifts the Landau levels inside the well and creates…
Chiral integer quantum Hall (QH) edge modes are immune to backscattering and therefore are non-localized and show a vanishing longitudinal as well as non-local resistance along with quantized 2-terminal and Hall resistance even in the…
We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found…
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in…
In this article we review the quantum Hall physics of graphene based two-dimensional electron systems, with a special focus on recent experimental and theoretical developments. We explain why graphene and bilayer graphene can be viewed…
Graphene matter in a strong magnetic field, realizing one-dimensional quantum Hall channels, provides a unique platform for studying electron interference. Here, using the Landauer-B\"uttiker formalism along with the tight-binding model, we…