Related papers: Dependence of quantum-Hall conductance on the edge…
The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in…
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge…
We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and…
We analyze the dissipative conductance of the zero-plateau quantum Hall state appearing in undoped graphene in strong magnetic fields. Charge transport in this state is assumed to be carried by a magnetic domain wall, which forms by…
We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of…
It has recently been shown that signatures of non-Hermitian topology can be realized in a conventional quantum Hall device connected to multiple current sources. These signatures manifest as robust current-voltage characteristics, dictated…
There are two types of edge states in graphene with/without magnetic field. One is a quantum Hall edge state, which is topologically protected against small perturbation. The other is a chiral zero mode that is localized near the boundary…
We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…
The electron-hole symmetry in the structure "graphene - insulating substrate -semiconductor gate" is violated due to an asymmetrical drop of potential in the semiconductor gate under positive or negative biases. The gate voltage…
Electronic edge states in topological insulators have become a major paradigm in physics. The oldest and primary example is that of quantum Hall (QH) edge channels that propagate along the periphery of two-dimensional electron gases (2DEGs)…
Fabrication of devices made by isolated Graphene or Graphene-like single layers (such as h-BN) has opened up possibility of examining highly correlated states of electron systems in parts of their phase diagram that is impossible to access…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
We report on the fate of the quantum Hall effect in graphene under strong laser illumination. By using Floquet theory combined with both a low energy description and full tight-binding models, we clarify the selection rules, the quasienergy…
The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…
Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronics, including magnetic focusing and lensing. An extension that appears unique to graphene is to use both n and p carrier types to create…
We study the realization in a model of graphene of the phenomenon whereby the tendency of gauge-field mediated interactions to break chiral symmetry spontaneously is greatly enhanced in an external magnetic field. We prove that, in the weak…
We study the influence of different kinds of gaps in a quasiparticle spectrum on longitudinal and transverse optical conductivities of bilayer graphene. An exact analytical expression for magneto-optical conductivity is derived using a…
A theoretical model is proposed to describe asymmetric gate-voltage dependence of conductance and noise in two-terminal ballistic graphene devices. The model is analyzed independently within the self-consistent Hartree and Thomas-Fermi…
Electron-hole asymmetry is a fundamental property in solids that can determine the nature of quantum phase transitions and the regime of operation for devices. The observation of electron-hole asymmetry in graphene and recently in the phase…
We simulate a hybrid superconductor-graphene device in the quantum Hall regime to identify the origin of downstream resistance oscillations in a recent experiment [Zhao et. al. Nature Physics 16, (2020)]. In addition to the previously…