Related papers: Characterization of 3D-DDTC detectors on p-type su…

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that…

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a…

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar…

3D silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrating into the bulk material in contrast to standard Si detectors with planar electrodes on its top and bottom. This geometry renders…

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade.

Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and…

We developed a 2-mm-thick CdTe double-sided strip detector (CdTe-DSD) with a 250 um strip pitch, which has high spatial resolution with a uniform large imaging area of 10 cm$^2$ and high energy resolution with high detection efficiency in…

The performance of a double sided silicon strip detector (DSSSD), used for position and energy detection of heavy ions, is reported. The analysis shows that the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD…

A model of the Li-diffused inactive layer in P-type high purity germanium detectors is built to describe the transportation of charge carriers and calculate the charge collection efficiency therein. The model is applied to calculate charge…

Existing Charge-Coupled Devices (CCDs) operate by detecting either the electrons or holes created in an ionization event. We propose a new type of imager, the Dual-Sided CCD, which collects and measures both charge carriers on opposite…

A detector with a profile-based cathode and a pad-strip cathode readout system is experimentally investigated. Cathode pads arranged along each anode wire are diagonally interconnected and form strips that cross the detector at an angle…

This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of…

Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…

The first successful attempts to optimize the electric field in Resistive Microstrip Gas Chamber and resistive microdot detectors using additional field shaping strips located inside the detector substrate are described

P-type point contact (PPC) germanium detectors are used in rare event and low-background searches, including neutrinoless double beta (0vbb) decay, low-energy nuclear recoils, and coherent elastic neutrino-nucleus scattering. The detectors…

In order to fully exploit the physics potential of the future high energy e+ e- linear collider, a Vertex Tracker providing high resolution track reconstruction is required. Hybrid pixel sensors are an attractive technology due to their…

A high-performance p-type transparent conductor (TC) does not yet exist, but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices.…

Defects in semiconductor crystals can have significant detrimental effects on their performance as radiation detectors. Defects cause charge trapping and recombination, leading to lower signal amplitudes and poor energy resolution. We have…

Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Cost effectiveness and high radiation resistance are two important requirements for technologies to be used in inner tracking devices.…

We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from…