Silicon Sensors implemented on p-type substrates for high radiation resistance applications

Marina Artuso

doi:10.1016/j.nima.2007.07.106

Silicon Sensors implemented on p-type substrates for high radiation resistance applications

Instrumentation and Detectors 2008-11-26 v1

Authors: Marina Artuso

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Abstract

Silicon based micropattern detectors are essential elements of modern high energy physics experiments. Cost effectiveness and high radiation resistance are two important requirements for technologies to be used in inner tracking devices. Processes based on p-type substrates have very strong appeal for these applications. Recent results and prototype efforts under way are reviewed.

Keywords

silicon sensors p-type substrates radiation resistance micropattern detectors inner tracking high energy physics

Cite

@article{arxiv.physics/0701270,
  title  = {Silicon Sensors implemented on p-type substrates for high radiation resistance applications},
  author = {Marina Artuso},
  journal= {arXiv preprint arXiv:physics/0701270},
  year   = {2008}
}

Comments

7 pages, 2 figures; invited paper at Vertex 2006, Perugia, Italy, september 2006

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