Related papers: Tunable Indistinguishable Photons From Remote Quan…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…
We report significant deviations from the usual quadratic dependence of the ground state interband transition energy on applied electric fields in InAs/GaAs self-assembled quantum dots. In particular, we show that conventional second-order…
Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never…
Efficient light-matter interaction at the single-photon level is of fundamental importance in emerging photonic quantum technology. A fundamental challenge is addressing multiple quantum emitters at once, as intrinsic inhomogeneities of…
We demonstrate a tunable Kondo effect realized in small quantum dots. We can switch our dot from a Kondo impurity to a non-Kondo system as the number of electrons on the dot is changed from odd to even. We show that the Kondo temperature…
Wavelength conversion at the single-photon level is required to forge a quantum network from distinct quantum devices. Such devices include solid-state emitters of single or entangled photons, as well as network nodes based on atoms or…
We demonstrate reversible strain-tuning of a quantum dot strongly coupled to a photonic crystal cavity. We observe an average redshift of 0.45 nm for quantum dots located inside the cavity membrane, achieved with an electric field of 15…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Embedding semiconductor quantum dots into bullseye resonators has significantly advanced the development of bright telecom quantum light sources for fiber-based quantum networks. To further improve the device flexibility and stability, the…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
We show that two spatially separated semiconductor quantum dots under resonant and continuous-wave excitation can be strongly entangled in the steady-state, thanks to their radiative coupling by mutual interaction through the normal modes…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin…
A scheme of resonant tunneling through the metastable state of semiconductor quantum dot is presented and implemented in the transport study of freestanding InAs quantum dots grown on GaAs(001) under illumination using conductive atomic…
We theoretically study the subband structure of single Si $\delta$-doped GaAs inserted in a quantum well and subject to an electric field applied along the growth direction. We use an efficient self-consistent procedure to solve…
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum…
We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order temporal coherence function of the photons emitted at various wavelengths is measured…
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be…
Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can…
Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy…