Related papers: Tunable Indistinguishable Photons From Remote Quan…
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance.…
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current…
Spectral diffusion (SD) represents a substantial obstacle towards implementation of solid-state quantum emitters as a source of indistinguishable photons. By performing high-resolution emission spectroscopy for individual colloidal quantum…
The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which…
We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point…
We review experiments on single electron transport through single quantum dots in the presence of a microwave signal. In the case of a small dot with well-resolved discrete energy states, the applied high-frequency signal allows for…
We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a…
We study coupled semiconductor quantum dots theoretically through a generalized Hubbard approach, where intra- and inter-dot Coulomb Correlation, as well as tunneling effects are described on the basis of realistic electron wavefunctions.…
The polarization splitting of the exciton ground state in two laterally coupled quantum dots under an in-plane electric field is investigated and its effective tuning is designed. It is found that there are significant Stark effect and…
We demonstrate the control of the spontaneous emission rate of single InAs quantum dots embedded in a double-membrane photonic crystal cavity by the electromechanical tuning of the cavity resonance. Controlling the separation between the…
Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot…
We study single-parameter quantized charge pumping via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of…
A high-efficiency spin-photon interface is an essential piece of quantum hardware necessary for various quantum technologies. Self-assembled InGaAs quantum dots have excellent optical properties, if embedded into an optical micro-cavity…
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…
We find an interference effect for electron-phonon interactions in coupled semiconductor quantum dots that can dominate the nonlinear transport properties even for temperatures close to zero. The intradot electron tunnel process leads to a…
We report highly efficient single photon generation from InGaAs self-assembled quantum dots emitting within a two-dimensional photonic bandgap. A strongly suppressed multiphoton probability is obtained for single quantum dots in bulk GaAs…
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent…