Related papers: Magnetocaloritronic nanomachines
Two-dimensional (2D) materials enable new types of magnetic and electronic phases mediated by their reduced dimensionality like magic-angle induced phase transitions, 2D Ising antiferromagnets and ferromagnetism in 2D atomic layers and…
Magnetic molecules are a class of compounds that is also investigated in view of their magnetocaloric properties. The isothermal entropy change and the adiabatic temperature change are key figures of merit for magnetocaloric performance.…
Control of magnetic domain wall motion holds promise for efficient manipulation and transfer of magnetically stored information. Thermal magnon currents, generated by temperature gradients, can be used to move magnetic textures, from domain…
We propose a method for modeling the magnetic properties of nanomaterials with different structures. The method is based on the Ising model and the approximation of the random field interaction. It is shown that in this approximation, the…
A numerical study of thermoelectric nanocomposites is presented. Thermoelectric properties as a function of average grain size or nanoparticle density are examined by simulating the measurements as they would be done experimentally. In…
It has recently been shown that domain walls in ferromagnets can be moved in the presence of thermal gradients. In this work we study the motion of narrow domain walls in low-dimensional systems when subjected to thermal gradients. The…
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga,Mn)As by scattering theory: domain wall motion induced by a temperature gradient as well as heat currents pumped by a moving domain wall. The effective…
The chirality-dependent magnetoelectric properties of Neel-type domain walls in iron garnet films is observed. The electrically driven magnetic domain wall motion changes the direction to the opposite with the reversal of electric polarity…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Motivated from recent experiments in kappa-(BEDT-TTF)_2Cu_2(CN)_3, dielectric and magnetic properties in a dimer-Mott insulator are studied. We derive the effective Hamiltonian where the number of electron per dimer is taken to be one.…
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall…
Over the last two decades, the research activities on magnetocalorics have been exponentially increased leading to the discovery of a wide category of materials including intermetallics and oxides. Even though the reported materials were…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable…
A model is studied for the theoretical description of nanoscale magnetic films with high perpendicular anisotropy. In the model the magnetic film is described in terms of single domain magnetic grains with Ising-like behavior, interacting…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…
Magnetoresistance in many samples of Dirac semimetal and topological insulator displays non-monotonic behaviors over a wide range of magnetic field. Here a formula of magnetoconductivity is presented for massless and massive Dirac fermions…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…