Related papers: Mapping the Dirac point in gated bilayer graphene
Within the tight binding approximation, we study the dependence of the electronic band structure and of the optical conductivity of a graphene single layer on the modulus and direction of applied uniaxial strain. While the Dirac cone…
We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks,…
Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limited. Using scanning tunneling microscopy, we investigate…
We investigate the vacancy effects on quasiparticle band structure of graphene near the Dirac point. It is found that each Dirac nodal point splits into two new nodal points due to the coherent scattering among vacancies. The splitting…
We present a unified theory of charge carrier transport in 2D Dirac systems with broken mirror inversion and time-reversal symmetries (e.g., as realized in ferromagnetic graphene). We find that the entanglement between spin and pseudospin…
A directional photon-assisted resonant chiral tunneling through a bilayer graphene barrier is considered. An external electromagnetic field applied to the barrier switches the transparency $T$ in the longitudinal direction from its steady…
We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene…
Based on the time-dependent nonequilibrium Green's function method we investigate theoretically the time and spin-dependent transport through a graphene layer upon the application of a static bias voltage to the electrodes and a…
Bernal-stacked multilayer graphene is a versatile platform to explore quantum transport phenomena and interaction physics due to its exceptional tunability via electrostatic gating. For instance, upon applying a perpendicular electric…
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO2, is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001)…
At photonic Dirac points, electromagnetic waves are governed by the same equations as two-component massless relativistic fermions. However, photonic Dirac points are known to occur in pairs in "photonic graphene" and other similar photonic…
The electronic properties of graphene may be changed from semimetallic to semiconducting by introducing perforations (antidots) in a periodic pattern. The properties of such graphene antidot lattices (GALs) have previously been studied…
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is…
Recently a paper of Klimovskikh et al. was published presenting experimental and theoretical analysis of the graphene/Pb/Pt(111) system. The authors investigate the crystallographic and electronic structure of this graphene-based system by…
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described…
This review aims at a theoretical discussion of Dirac points in two-dimensional systems. Whereas Dirac points and Dirac fermions are prominent low-energy electrons in graphene (two-dimensional graphite), research on Dirac fermions in…
State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1,…
We show that the critical charge for the Dirac excitations in gapless graphene depends on the spatial topology of the sample. In particular, for graphene cones, the effective value of the critical charge can tend towards zero for a suitable…
We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…
The generalized tight-binding model is developed to investigate the magneto-electronic properties in twisted bilayer graphene system. All the interlayer and intralayer atomic interactions are included in the Moire superlattice. The twisted…