Related papers: Magnetoresistance in Dilute $p$-Si/SiGe in Paralle…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was…
Magnetoresistivity $\rho _{xx}$ and $\rho _{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic…
The magnetoresistance components $\rho_{xx}$ and $\rho_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy…
We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $\rho_{xx}$ and $\rho_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
We have studied the magnetoresistance in a high-mobility Si inversion layer down to low electron concentrations at which the longitudinal resistivity $\rho_{xx}$ has an activated temperature dependence. The angle of the magnetic field was…
We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effects of disorder and parallel field: the parallel field weakens…
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility \mu=1.9 x 10^5 cm^2/Vs at density n=1.45 x…
The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%),…
In the quantum Hall regime, the longitudinal resistivity $\rho_{xx}$ plotted as a density--magnetic-field ($n_{2D}-B$) diagram displays ringlike structures due to the crossings of two sets of spin split Landau levels from different subbands…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…
We report measurements of the in-plane and interlayer magnetoresistances of FeSe. The in-plane magnetoresistance $\Delta \rho_{ab}/\rho_{ab}(0)$ for $B \parallel c$ is positive below $T_s$ and increases with decreasing temperature,…
The results of heat-capacity, magnetic susceptibility, electrical resistivity and magnetoresistance $(\Delta \rho/\rho)$ measurements on the compounds Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$, are reported. The results establish that these…
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator…
In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…
We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the…
The isothermal magnetoresistance (MR) with magnetic field (H) parallel to and perpendicular to ab plane is systematically studied on the single crystal Na$_{0.52}$CoO$_2$ with charge ordering at $\sim 50$ K and an in-plane ferromagnetism…
We report a large linear magnetoresistance in Cu$_{2-x}$Te, reaching $\Delta\rho/\rho(0)$ = 250\% at 2 K in a 9 T field. This is observed for samples with $x$ in the range 0.13 to 0.22, and the results are comparable to the effects observed…
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The…