English

In-plane and interlayer magnetoresistance in FeSe

Superconductivity 2025-10-09 v2 Strongly Correlated Electrons

Abstract

We report measurements of the in-plane and interlayer magnetoresistances of FeSe. The in-plane magnetoresistance Δρab/ρab(0)\Delta \rho_{ab}/\rho_{ab}(0) for BcB \parallel c is positive below TsT_s and increases with decreasing temperature, exceeding 2.5 at TT = 10 K and BB = 14 T. The field-direction dependence indicates that the in-plane magnetoresistance is basically determined by the cc-axis component of the magnetic field. The interlayer magnetoresistance Δρc/ρc(0)\Delta \rho_{c}/\rho_{c}(0) is negative below TsT_s but turns positive below \sim18 K, which is probably due to the contamination by the large in-plane magnetoresistance. The field-direction dependence of the interlayer magnetoresistance can approximately be described by a standard formula for quasi-two-dimensional electron systems except near BabB \parallel ab. The experimental magnetoresistance near BabB \parallel ab is larger than the formula, which can be attributed to the so-called interlayer coherence peak. The large width of the peak indicates the correspondingly large interlayer transfer energy.

Keywords

Cite

@article{arxiv.2507.23255,
  title  = {In-plane and interlayer magnetoresistance in FeSe},
  author = {Taichi Terashima and Shinya Uji and Hiroaki Ikeda and Yuji Matsuda and Takasada Shibauchi and Shigeru Kasahara},
  journal= {arXiv preprint arXiv:2507.23255},
  year   = {2025}
}

Comments

15 pages, 7 figures