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Superconducting single photon detectors (SSPD) based on nanopatterned niobium nitride wires offer single photon counting at fast rates, low jitter, and low dark counts, from visible wavelengths well into the infrared. We demonstrate the…
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and…
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such…
Creating dense and shallow nitrogen vacancy (NV) ensembles with good spin properties, is a prerequisite for developing diamond-based quantum sensors exhibiting better performance. Ion implantation is a key enabling tool for precisely…
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count…
InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and…
One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics…
HVE-400 ion implanter is special ion implantation equipment for semiconductor materials boron and phosphorus doping. The ion source and extraction deflection system are at high voltage platform, while the corresponding control system is at…
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity…
The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor (SMT) was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the…
The search for light dark matter and cosmic primordial neutrinos necessitates detectors with sub-millielectronvolt (sub-meV) energy thresholds. While superconducting quantum sensors have approached this sensitivity, they often face…
The SPIDER experiment, operated at the Neutral Beam Test Facility of Consorzio RFX, Padua, hosts the prototype of the H-/D- ion source for the ITER neutral beam injectors. The maximization of the ion current extracted from the source and…
We propose a scheme for infrared single-photon detection based on two-photon absorption at room-temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the bandgap and the energy difference is complemented…
We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
Single-photon imaging spectrometers of high quantum efficiency in the infrared to ultraviolet wavelength range, with good timing resolution and with a vanishing dark count rate are on top of the wish list in earth-bound astronomy, material…
The coupled motion of ions in a radiofrequency trap has been used to connect the frequency- dependent laser-induced heating of a sympathetically cooled spectroscopy ion with changes in the fluorescence of a laser-cooled control ion. This…
Transmission of UV light with high beam quality and pointing stability is desirable for many experiments in atomic, molecular and optical physics. In particular, laser cooling and coherent manipulation of trapped ions with transitions in…
Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential…
Charge accumulation was measured under calibration conditions in the spread-out Bragg peak (SOBP) using the calibration bias as well as a range of voltages from 10V to 500V and a Farmer-style ion chamber. Collection efficiency was…