Related papers: Stimulated emission in erbium doped silicon rich n…
Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as…
In this letter, we study enhanced-retarded diffusion of oxygen in doped silicon by means of first principle calculations. We found that the migration of oxygen dimers can not be significantly affected by strain, doping type or rate. We…
The effect of magnetron power on the room temperature 1.54 $\mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon…
Erbium doped solids are potential candidates for the realization of a quantum memory for photons at telecommunication wavelengths. The implementation of quantum memory proposals in rare earth ion doped solids require spectral tailoring of…
We experimentally show octave-spanning supercontinuum generation in a non-stoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results…
We study an integrated silicon photonic chip, composed of several sub-wavelength ridge waveguides, and immersed in a micro-cell with rubidium vapor. Employing two-photon excitation, including a telecom wavelength, we observe that the…
Arrays of 10 nm-diameter point contacts of exchange-coupled spin-majority/spin-minority ferromagnetic metals, integrated into infrared-terahertz range photon resonators, are fabricated and measured electrically and optically. Giant,…
Erbium incorporated in a ceria (CeO2) host offers strong potential as a spin qubit platform, providing a pathway toward telecom-compatible quantum memory. But erbium is a dim emitter due to its long excited state lifetime. Methods to…
We present a resonant approach to enhance 1550nm emission efficiency of amorphous silicon sub-oxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Two distinct techniques were combined to provide a structure that…
This work reports optical functionality contained in, as well as and produced by, thin film coatings. A sol-gel process, formulated with precursor active ingredients of erbium oxide and tetraethylorthosilicate (TEOS), was used for…
We calculate the maximal absorption enhancement obtainable by guided mode excitation in a weakly absorbing dielectric slab over wide wavelength ranges. The slab mimics thin film silicon solar cells in the low absorption regime. We consider…
Vibrational overtone spectroscopy of molecules is a powerful tool for drawing information on molecular structure and dynamics. It relies on absorption of near infrared radiation (NIR) by molecular vibrations. Here we show the experimental…
Silicon nitride (SiN) is currently the most prominent platform for photonics at visible and near-IR wavelength bandwidth. However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains…
We report the observations of spontaneous Raman scattering in silicon photonic crystal waveguides. Continuous-wave measurements of Stokes emission for both wavelength and power dependence is reported in single line-defect waveguides in…
Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…
Erbium-doped lithium niobate on insulator (Er:LNOI) has attracted enormous interest as it provides gain and enables integrated amplifiers and lasers on the lithium niobate on insulator (LNOI) platform. We demonstrate a highly efficient…
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…
We demonstrate efficient pulse-energy extraction from a partly-quenched erbium-doped aluminosilicate fiber amplifier. This has a high erbium-concentration, which allows for short devices with reduced nonlinear distortions, but which also…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped…