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Related papers: Stimulated emission in erbium doped silicon rich n…

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Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to…

Quantum memories integrated into nanophotonic silicon devices are a promising platform for large quantum networks and scalable photonic quantum computers. In this context, erbium dopants are particularly attractive, as they combine optical…

Quantum Physics · Physics 2023-07-27 Stephan Rinner , Florian Burger , Andreas Gritsch , Jonas Schmitt , Andreas Reiserer

Coherent optomechanical interaction between acoustic and optical waves known as stimulated Brillouin scattering (SBS) can enable ultra-high resolution signal processing and narrow linewidth lasers important for next generation wireless…

3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and…

The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…

Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a…

To understand the optical properties of atoms in solid state matrices, the absorption, excitation and emission spectra of rubidium doped thin-films of argon, krypton and xenon were investigated in detail. A two-dimensional spectral analysis…

Atomic Physics · Physics 2012-07-24 Ilja Gerhardt , Brian Sin , Takamasa Momose

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…

Materials Science · Physics 2014-04-07 T. C. Hain , F. Fuchs , V. A. Soltamov , P. G. Baranov , G. V. Astakhov , T. Hertel , V. Dyakonov

Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization…

Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol-gel films, have been achieved. Phonon-assisted band-to-band emission from coated…

Materials Science · Physics 2016-12-16 S. Abedrabbo , A. T. Fiory , N. M. Ravindra

We report on strongly enhanced electron multiplication in thin silicon membranes. The device is configured as a transmission-type membrane for electron multiplication. A sub-threshold electric field applied on the emission side of the…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Hua Qin , Hyun-Seok Kim , Michael S. Westphall , Lloyd M. Smith , Robert H. Blick

In this paper we present irradiation measurements performed to select a transparent anode substrate that best meets the requirements of an optical readout for a novel detector, the LaGEMPix. The modification of the optical properties of the…

Instrumentation and Detectors · Physics 2021-06-10 A. Maia Oliveira , S. Braccini , P. Casolaro , N. Heracleous , J. Leidner , I. Mateu , F. Murtas , M. Silari

Stimulated Raman scattering is a well-known nonlinear process that can be harnessed to produce optical gain in a wide variety of media. This effect has been used to produce the first silicon-based lasers and high-gain amplifiers.…

Optics · Physics 2008-10-13 D. R. Solli , P. Koonath , B. Jalali

We present measurements of the linear Stark effect on the $^{4}$I$_{15/2} \to$ $^{4}$I$_{13/2}$ transition in an Er$^{3+}$-doped proton-exchanged LiNbO$_{3}$ crystalline waveguide and an Er$^{3+}$-doped silicate fiber. The measurements were…

Optical levitation of nano-scale systems offers a pathway to highly sensitive rotation measurements, which are critical for advancing gyroscopic technologies. While prior studies have primarily focused on controlling rotational degrees of…

Optical fiber tapers are used to collect photoluminescence emission at ~1.5 um from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. Photoluminescence collection via fiber taper is enhanced 2.5 times relative…

Silicon is an ideal material for on-chip applications, however its poor acoustic properties limit its performance for important optoacoustic applications, particularly for Stimulated Brillouin Scattering (SBS). We theoretically show that…

Stress-optic modulators are emerging as a necessary building block of photonic integrated circuits tasked with controlling and manipulating classical and quantum optical systems. While photonic platforms such as lithium niobate and silicon…

Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive…

Instrumentation and Detectors · Physics 2015-06-11 N. Yahlali , L. M. P. Fernandes , K. González , A. N. C. Garcia , A. Soriano

We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the…