Spin-Coated Erbium-Doped Silica Sol-Gel Films on Silicon
Abstract
This work reports optical functionality contained in, as well as and produced by, thin film coatings. A sol-gel process, formulated with precursor active ingredients of erbium oxide and tetraethylorthosilicate (TEOS), was used for spin-coating thin (~130 nm) erbium-doped (~6 at. %) silica films on single-crystal silicon. Annealed films produce infrared emission in the 1.5-micron band from erbium ions in the film, as well as greatly enhancing (~100X) band-gap emission from the underlying silicon. The distinctly different mechanisms for the two modes of optical activities are interpreted in terms of optical emission theory and modeling; prospects for opto-electronic applications are discussed.
Keywords
Cite
@article{arxiv.1202.0777,
title = {Spin-Coated Erbium-Doped Silica Sol-Gel Films on Silicon},
author = {Sufian Abedrabbo and Bashar Lahlouh and Sudhakar Shet and Anthony Fiory and Nuggehalli Ravindra},
journal= {arXiv preprint arXiv:1202.0777},
year = {2012}
}
Comments
9 pages, 3 figures, 36 references, TMS 2012 Conference