Related papers: Electric field-induced colossal electroresistance …
We investigated the thermodynamic property of the heavy fermion superconductor UTe$_2$ in pulsed high magnetic fields. The superconducting transition in zero field was observed at $T_{\rm c}$=1.65 K as a sharp heat capacity jump.…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy…
We report a highly unusual temperature dependence in the magnetoresistance of a weakly interacting high mobility 2D electron gas (2DEG) under a parallel magnetic field and when the current is perpendicular to the field. While the linear…
We measured the I(V) and dV/dI(V) characteristics of TiTe2-based point contacts (PCs) from room to helium temperatures. Features indicating the emergence of a charge density wave (CDW) were detected. They represent symmetrical relatively…
The device of electric double-layer transistor (EDLT) with ionic liquid has been employed as an effective way to dope carriers over a wide range, which can induce metallic state, magnetic reconstruction and superconducting transition.…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a…
The normal-state in-plane resistivity below the zero-field superconducting transition temperature $T_c$ and the upper critical field Hc2 were measured by suppressing superconductivity in pulsed magnetic fields for K0.70Fe1.46Se1.85Te0.15.…
Recently the memristive electrical transport properties in NbO$_2$ have attracted much attention for their promising application to the neuromorphic computation. At the center of debates is whether the metal-to-insulator transition (MIT)…
The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…
Phase transitions driven by external stimuli are central to condensed matter physics, providing critical insights into symmetry breaking and emergent phenomena. Recently, ferrimagnetic (FiM) Mn$_3$Si$_2$Te$_6$ has attracted considerable…
Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…
We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…
Recently, high-temperature superconductivity has been established in bilayer La3Ni2O7, which exhibits a density-wave (DW) transition at ~ 150 K under ambient pressure. The DW order is believed to be linked to superconductivity, as it is…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching…
We report the discovery of a metamagnetic phase transition in a polar antiferromagnet Ni$_3$TeO$_6$ that occurs at 52 T. The new phase transition accompanies a colossal magnetoelectric effect, with a magnetic-field-induced polarization…
It is shown that with increasing magnitude of current (I), resistivity of Sm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metal transition which is also accompanied by an abrupt decrease in temperature of the sample. We…