Related papers: Electric field-induced colossal electroresistance …
Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance,…
We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main…
The novel field-induced re-entrant phase in multiferroic hexagonal HoMnO3 is investigated to lower temperatures by dc magnetization, ac susceptibility, and specific heat measurements at various magnetic fields. Two new phases have been…
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
We investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence…
Measurements are presented of the complex dynamic Young's modulus of NdNiO3 and Nd0.65Eu0.35NiO3 through the Metal-Insulator Transition (MIT). On cooling, the modulus presents a narrow dip at the MIT followed by an abrupt stiffening of ~6%.…
The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…
The 0.5(BiGdxFe1-xO3)-0.5(PbZrO3) composite was synthesized using a high temperature solid-state reaction technique. Preliminary X-ray structural analysis confirms the formation of the composite. The dielectric constant and loss tangent…
We study the temperature dependence of the conductivity of the 2D electronic solid. In realistic samples, a domain structure forms in the solid and each domain randomly orients in the absence of the in-plane field. At higher temperature,…
Electric-field-dependent pulse measurements are reported in the charge-ordered state of alpha-(BEDT-TTF)2I3. At low electric fields up to about 50 V/cm only negligible deviations from Ohmic behavior can be identified with no threshold…
We have investigated the behavior of the resistance of graphene at the $n=0$ Landau Level in an intense magnetic field $H$. Employing a low-dissipation technique (with power $P<$3 fW), we find that, at low temperature $T$, the resistance at…
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory…
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between…
Electric conductivity and structural details of the hole-doped polaron conductor La0.9Sr0.1FeO3 (LSF10) are reported. The conductivity of a single crystal shows an exponential increase with temperature with a maxi-mum of 100 S/cm at 700 K…
The dynamical electric behavior of a NiTi smart alloy thin filament when driven by time varying current pulses is studied by a structure-based phenomenological model that includes rate-based effects. The simulation model relates the alloy's…
We report on observations of the electrical transport within a chain of metallic beads (slightly oxidised) under an applied stress. A transition from an insulating to a conductive state is observed as the applied current is increased. The…
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
Thermal excitations typically reduce the electric polarization in ferroelectric materials. Here, we show by means of first-principles calculations that multiferroic BiFe$_{1-x}$Co$_{x}$O$_{3}$ solid solutions with $0.25 \le x \le 0.50$…