Related papers: SiC Graphene Suitable For Quantum Hall Resistance …
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
Recently unusual integer quantum Hall effect was observed in graphene in which the Hall conductivity is quantized as $\sigma_{xy}=(\pm 2, \pm 6, \pm 10, >...) \times \frac{e^2}{h}$, where $e$ is the electron charge and $h$ is the Planck…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals,…
We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…
This short theoretical review deals with some essential ingredients for the understanding of the quantum Hall effect in graphene in comparison with the effect in conventional two-dimensional electron systems with a parabolic band…
In this article we briefly review recent experimental and theoretical work on quantum Hall effect in graphene, and argue that some of the quantum Hall states exhibit spontaneous symmetry breaking that is driven by electron-electron…
Large-scale atomically thin metals can be stabilized through confinement epitaxy at graphene / SiC interface, which exhibit a gradient bonding type and are air stable, providing a compelling platform for quantum and optoelectronic…
Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of…
We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of…
We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their…
We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at $\sigma_{xy} = \pm(n + 1/2)4e^2/h$ ($n$ is an integer) gets…
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…
The realization of air-stable 2D metals epitaxial to SiC and capped by graphene creates a potentially immense chemical space of 2D metals and alloys that could expand the variety of solid-state excitations unique to 2D metals beyond what is…
We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the…
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the…
Graphene is a powerful playground for studying a plethora of quantum phenomena. One of the remarkable properties of graphene arises when it is strained in particular geometries and the electrons behave as if they were under the influence of…
Recent years have witnessed great interest in the quantum spin Hall effect (QSHE) which is a new quantum state of matter with nontrivial topological property due to the scientific importance as a novel quantum state and the technological…
The quantum Hall effect has been predicted and discovered in various condensed-matter systems. A promising quantum material for such topological effects is graphene. We report the numerical observation of a curvature-induced spin-Hall…
We study the effect of a uniform pseudomagnetic field, induced by a strain in a monolayer and double layer of gapped graphene, acting on excitons. For our analysis it is crucial that the pseudomagnetic field acts on the charges of the…