Related papers: SiC Graphene Suitable For Quantum Hall Resistance …
Nanoporous materials represent a versatile solution for a number of applications ranging from sensing, energy applications, catalysis, drug delivery, and many others. The synergy between the outstanding properties of graphene with a…
The electromagnetic response of graphene in a magnetic field is studied, with particular emphasis on the quantum features of its ground state (vacuum). The graphene vacuum, unlike in conventional quantum Hall systems, is a dielectric medium…
Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an…
Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible…
The emergence of topological order in graphene is in great demand for the realization of quantum spin Hall states. Recently, it is theoretically proposed that the spin textures of surface states in topological insulator can be directly…
Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and…
We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature…
In view of the progress achieved in the field of the ac quantum Hall effect, the Working Group of the Comite Consultatif d'Electricite et Magnetisme (CCEM) on the AC Quantum Hall Effect asked the authors of this paper to write a compendium…
We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the…
The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth…
The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. Engineering…
Due to its fourfold spin-valley degeneracy, graphene in a strong magnetic field may be viewed as a four-component quantum Hall system. We investigate the consequences of this particular structure on a possible, yet unobserved, fractional…
Experiments are finally revealing intricate facts about graphene which go beyond the ideal picture of relativistic Dirac fermions in pristine two dimensional (2D) space, two years after its first isolation. While observations of rippling…
In this Chapter, we give a brief review of the state of the art of theoretical and experimental studies of synthetic magnetic fields and quantum Hall effects in ultracold atomic gases. We focus on integer, spin, and fractional Hall effects,…
We investigate quantum transport in graphene/InSe heterostructures and find major asymmetries in the longitudinal resistance ($R_{xx}$) and vanishing $R_{xx}$ peaks at high magnetic fields, particularly at the charge-neutrality point. Our…
We performed thermoelectric Hall conductivity $\alpha_{xy}$ measurements on single-crystal graphite in the quantum limit up to 13 T. Both electrical and thermoelectric transport measurements were performed on the same crystal to extract…
We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69{\deg} on SiC substrates to 92{\deg} with graphene. It is…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…