Related papers: Measuring Charge Transport in an Amorphous Semicon…
We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…
A 0.93 gram $1{\times}1{\times}0.4$ cm$^3$ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector's response under a…
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived…
Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will…
A readout electronics used in space cosmic-ray charges measurement for multi-channel silicon detector and its performance test results are introduced in this paper. A 64-channel charge sensitive ASIC (VA140) from IDEAS company is adopt in…
In this work we study, theoretically, electronic mobility of the silicon carbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown great potential for applications in extreme conditions. Thus, the study of the electronic…
Amorphous silicon (a-Si) is an important thermal-management material and also serves as an ideal playground for studying heat transport in strongly disordered materials. Theoretical prediction of the thermal conductivity of a-Si in a wide…
Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by modeling and simulations…
We study the electronic transport in lightly phosphorus-doped hydrogenated microcrystalline silicon ($\mu$c-Si:H) and nominally undoped hydrogenated silicon carbide ($\mu$c-SiC:H) by temperature-dependent Hall measurements. The material…
We present a detailed theoretical description of quantum coherent electron transport in voltage-biased cross-like Andreev interferometers. Making use of the charge conjugation symmetry encoded in the quasiclassical formalism, we elucidate a…
Electric-field-driven transport of electronic fluids in metallic glasses as well as three-dimensional amorphous superconductors are investigated by using the verified approach which has been successfully adopted to study the critical…
Conducting submicron particles are well-suited as filler particles in non-conducting polymer matrices to obtain a conducting composite with a low percolation threshold. Going to nanometer-sized filler particles imposes a restriction to the…
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…
Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift…
We present an advanced lateral triple quantum dot made by local anodic oxidation. Three dots are coupled in a starlike geometry with one lead attached to each dot thus allowing for multiple path transport measurements with two dots per…
Hybrid silicon pixel detectors are currently used in the innermost tracking system of the Compact Muon Solenoid (CMS) experiment. Radiation tolerance up to fluences expected for a few years of running of the Large Hadron Collider (LHC) has…
In order to optimize the optoelectronic properties of novel solar cell architectures, such as the amorphous-crystalline interface in silicon heterojunction devices, we calculate and analyze the local microscopic structure at this interface…
Spectroscopy is a powerful tool to probe physical, chemical, and biological systems. Recent advances in microfabrication have introduced novel, intriguing mesoscopic quantum systems including superconductor-semiconductor hybrid devices and…
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…
Electrostatic sensing technology is widely utilized in both military and civilian applications, including electrostatic prevention in gas stations and various electronic devices. The high sensitivity of electrostatic sensor is capable to…