Related papers: Measuring Charge Transport in an Amorphous Semicon…
We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…
We have investigated the charge carrier transport in organic molecular semiconductors. It has been found that mobility is a function of electric field and temperature due to hopping conduction. Several theoretical models for charge…
The investigation of the electronic properties of semiconductors is inherently challenging due to the ensemble averaging of fundamentals to transport measurements (i.e., resistivity, Hall, and Seebeck coefficient measurements). Here, we…
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
Hydrogenated amorphous silicon (a-Si:H) has had a long standing role as a passivating dielectric for c-Si, often utilized in the early development of ICs and more recently for Si solar cells. Although it has been studied for more than 60…
With the growing demand for efficient power electronics, SiC-based devices are progressively becoming more relevant. In contrast to established methods such as the mercury capacitance-voltage technique, terahertz spectroscopy promises a…
Compressibility measurements, sensitive to charge rearrangements, are performed on a quantum point contact (QPC). Screening due to mobile charges in the QPC is quantitatively measured, using a second point contact to detect the screened…
We perform broadband phase sensitive measurements of the reflection coefficient from 45 MHz up to 20 GHz employing a vector network analyzer with a 2.4 mm coaxial sensor which is terminated by the sample under test. While the material…
When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…
The loss of amorphous hydrogenated silicon nitride (a-SiN$_{x}$:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system (TLS)…
A semiclassical model of charge transport in a semiconductor superlattice is solved, using moments in the wavenumber direction and finite elements in the spatial direction (first order). The selection of numerical methods guarantees the…
We discuss the nature of charge transfer in molecular conductors upon connecting to two metallic contacts and imposing a voltage bias across them. The sign of the charge transfer (oxidation vs. reduction) depends on the position of the…
We present the status of the forward-backward charge asymmetry measurement for W boson production using early Run 2 data collected with the Collider Detector at Fermilab (CDF). Tracking for forward electrons is a critical component of this…
The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common…
We present a method for incorporating image-charge effects into the description of charge transport through molecular devices. A simple model allows us to calculate the adjustment of the transport levels, due to the polarization of the…
This paper presents a measurement of the ordering of charged hadrons in the azimuthal angle relative to the beam axis in high-energy proton-proton collisions at the Large Hadron Collider (LHC). A spectral analysis of correlations between…
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…
Understanding and suppressing sources of decoherence is a leading challenge in building practical quantum computers. In superconducting qubits, low frequency charge noise is a well-known decoherence mechanism that is effectively suppressed…
Atomic-scale charge transport properties are not only of significant fundamental interest but also highly relevant for numerous technical applications. However, experimental methods which are capable of detecting charge transport at the…
We developed a novel contactless frequency-domain approach to study thermal transport, which is particularly convenient when thermally anisotropic materials are considered. The method is based on a similar line-shaped heater geometry as…