Related papers: Long-lived spin memory in Mn-doped GaAs: Time reso…
To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
Numerical modelling of coherent spin relaxation in nanomagnets, formed by magnetic molecules of high spins, is accomplished. Such a coherent spin dynamics can be realized in the presence of a resonant electric circuit coupled to the magnet.…
Spatiotemporal spin dynamics under spin-orbit interaction is investigated in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. Spin polarized electrons are diffused away from the excited position,…
The density matrix formalism is applied to calculate the spin-relaxation time for two-dimensional systems with a hierarchy of spin-orbit couplings, such as Rashba-type, Dresselhaus-type and so on. It is found that the spin-relaxation time…
Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel…
We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the…
The versatile potential of lead halide perovskites and two-dimensional materials is merged in the Ruddlesen-Popper perovskites having outstanding optical properties. Here, the coherent spin dynamics in Ruddlesen-Popper (PEA)$_2$PbI$_4$…
Electron spin relaxation in a spin-polarized quantum Hall state is studied. Long spin relaxation times that are at least an order of magnitude longer than those measured in previous experiments were observed and explained within the…
The spin state of holes bound to Mn acceptors in GaMnAs is investigated by optical spectroscopy. Concentrations of Mn from 10^17 to 10^19 cm^-3 were studied as a function of magnetic field and temperature. The photoluminescence from…
The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The…
The transverse and longitudinal relaxation rates 1/$T_2$ and 1/$T_1$ of $^{55}$Mn in molecular cluster magnet Mn$_{12}$Ac have been measured al low temperatures down to 200mK and in the fields upto 9T. Both of 1/$T_2$ and 1/$T_1$ exhibit…
The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in…
The dynamical behavior of the magnetism of diluted magnetic semiconductors (DMS) has been investigated by means of atomistic spin dynamics simulations. The conclusions drawn from the study are argued to be general for DMS systems in the low…
We have investigated spin relaxation times in CdTe quantum dots doped with a single Mn atom, a prototype of a system where the interaction between a single charge carrier and a single spin takes place. A theoretical model that was used…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of…
A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method…
We study the spin relaxation in a single-electron bilayer graphene quantum dot due to the spin-orbit coupling. The spin relaxation is assisted by the emission of acoustic phonons via the bond-length change and deformation potential…
A method is presented to calculate the spin relaxation times T1, T2 due to a non-uniform magnetic field, and the linear-in-electric-field precession frequency shift {\delta}{\omega}E when an electric field is present, in the diffusion…