Related papers: Long-lived spin memory in Mn-doped GaAs: Time reso…
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with…
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation…
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the…
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of…
Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A3B5 semiconductors supplies not only holes, but also localized spins. The…
The evolution of the electron spin dynamics as consequence of carrier delocalization in $n$-type GaAs is investigated by the recently developed extended pump-probe Kerr/Faraday rotation spectroscopy. We find that isolated electrons…
We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
An experimental technique for the indirect manipulation and detection of electron spins entangled in two-dimensional magnetoexcitons has been developed. The kinetics of the spin relaxation has been investigated. Photoexcited…
We report on the optical manipulation of the electron spin relaxation time in a GaAs based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
We develop an extended pump-probe Faraday rotation technique to study the submicrosecond electron spin dynamics with picosecond time resolution in a wide range of magnetic fields. The electron spin dephasing time $T_2^*$ and the…
By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_sf monotonically decreases by more than one order of…
We present an investigation of electron-spin dynamics in p-doped bulk GaAs due to the electron-hole exchange interaction, aka the Bir-Aronov-Pikus mechanism. We discuss under which conditions a spin relaxation times for this mechanism is,…
We provide a quantitative theoretical model study of the dynamical magnetic properties of optimally annealed Ga$_{1-x}$Mn$_x$As. This model has already been shown to reproduce accurately the Curie temperatures for Ga$_{1-x}$Mn$_x$As. Here…
We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
The time dependence of muon spin relaxation has been measured in high purity aluminum and silver samples in a longitudinal 2 T magnetic field at room temperature, using time-differential \musr. For times greater than 10 ns, the shape fits…
Recently K. Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in $n$-doped GaAs in the regime close to the metal-insulator transition. We…
Spin relaxation of a single electron in a weakly coupled double quantum dot is calculated numerically. The phonon assisted spin flip is allowed by the presence of the linear and cubic spin-orbit couplings and nuclear spins. The rate is…