Related papers: Long-lived spin memory in Mn-doped GaAs: Time reso…
We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in…
Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by…
We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…
The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal…
We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots…
Muon spin relaxation ($\mu$SR) measurements in high transverse magnetic fields ($\parallel \hat c$) revealed strong field-induced quasi-static magnetism in the underdoped and Eu doped (La,Sr)$_{2}$CuO$_{4}$ and…
Today's great challenges of energy and informational technologies are addressed with a singular compound, the Li and Na doped few layer graphene. All what is impossible for graphite (homogeneous and high level Na doping), and unstable for…
Photo-excited precession of magnetization in (Ga,Mn)As is investigated by measuring time-resolved magneto-optical response and transient differential reflectivity with pump-and-probe technique. In the time region less than 1 ps, rapidly…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
This paper presents a study of electron spin dynamics in bulk GaAs at low temperatures for elevated optical excitation conditions. Our time-resolved Faraday rotation measurements yield sub-nanosecond electron spin dephasing-times over a…
We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The…
The unique combination of outstanding optical quality and attractive spin properties opens new avenues for optical spin control in hybrid organic-inorganic perovskite semiconductors. Using the optically detected magnetic resonance…
The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…
We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven…
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate…
We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…