Related papers: Annular Spin-Transfer Memory Element
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
The field of magnonics, which aims at using spin waves as carriers in data processing devices, has attracted increasing interest in recent years. We present and study micromagnetically a nonlinear nanoscale magnonic ring resonator device…
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of…
We investigate magnetization reversal processes of magnetic nanorings. Using a recently developed efficient cartesian coordinates fast multipole method, magnetization switching phase diagrams are constructed for such structures. We find…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Recently, Pang et al reported a novel polarization transfer scheme applicable to three-spin systems, whereby a rotating-frame NMR analogue of the cross effect could transfer polarization between; e.g., two 13Cs and an 15N in a single…
Nanodots with magnetic vortices have many potential applications, such as magnetic memories (VRAMs) and spin transfer nano-oscillators (STNOs). Adding a perpendicular anisotropy term to the magnetic energy of the nanodot it becomes possible…
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Understanding the stability of thin film nanomagnets with perpendicular magnetic anisotropy (PMA) against thermally induced magnetization reversal is important when designing perpendicularly magnetized patterned media and magnetic random…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
Recent advances in the studies of pure spin currents - flows of angular momentum (spin) not accompanied by the electric currents - have opened new horizons for the emerging technologies based on the electron's spin degree of freedom, such…
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…