Related papers: Annular Spin-Transfer Memory Element

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…

The asymptotic behavior of switching time as a function of current for a uniaxial macrospin under the effects of both spin-torque and thermal noise is explored analytically by focusing on its diffusive energy space dynamics. The scaling…

Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction.…

Using the ultra low damping NiMnSb half-Heusler alloy patterned into vortex-state magnetic nano-dots, we demonstrate a new concept of non-volatile memory controlled by the frequency. A perpendicular bias magnetic field is used to split the…

The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven…

Noncollinear magnets provide essential ingredients for the next generation memory technology. It is a new prospect for the Heusler materials, already well known due to the diverse range of other fundamental characteristics. Here, we present…

Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…

We present experimental and numerical micromagnetic data on the effect of spin momentum transfer in current perpendicular to the plane spin valves. Starting from a configuration with orthogonal free and pinned layer magnetizations, the free…

Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical…

Digital magnetic recording is based on the storage of a bit of information in the orientation of a magnetic system with two stable ground states. Here we address two fundamental problems that arise when this is done on a quantized spin:…

Magnetization reversal in magnetic particles is one of the fundamental issues in magnetic data storage. Technological improvements require the understanding of dynamical magnetization reversal processes at nanosecond time scales. New…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

A content-addressable-memory compares an input search word against all rows of stored words in an array in a highly parallel manner. While supplying a very powerful functionality for many applications in pattern matching and search, it…

We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…