Related papers: Plateau insulator transition in graphene
We analyze the dissipative conductance of the zero-plateau quantum Hall state appearing in undoped graphene in strong magnetic fields. Charge transport in this state is assumed to be carried by a magnetic domain wall, which forms by…
Quantum Hall effect in 1,2-layer graphene is analyzed. The transverse and longitudinal resistivity are found to be universal functions of the filling factor and temperature. At fixed magnetic field mode the magneto-transport problem is…
The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
We study the quantum critical behavior of the plateau-insulator (PI) transition in a low mobility InGaAs/InP heterostructure. By reversing the direction of the magnetic field (B) we find an averaged Hall resistance \rho_xy which remains…
For more than a decade it was widely accepted that two-dimensional electrons are insulating at zero temperature and at zero magnetic-field. Experimentally it was demonstrated that, when placed in a strong perpendicular magnetic field, the…
The scaling behavior of the quantum phase transition from an insulator to a quantum Hall plateau state has often been examined within systems realizing Landau levels. We study the topological transition in energy band models with nonzero…
The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high field regime, the eight-fold degeneracy in the zero…
We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with…
Using different experimental techniques we examine the dynamical scaling of the quantum Hall plateau transition in a frequency range f = 0.1-55 GHz. We present a scheme that allows for a simultaneous scaling analysis of these experiments…
We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show \textit{in situ} half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields…
We have measured the quantum-Hall activation gaps in graphene at filling factors $\nu=2$ and $\nu=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $\nu =6$ gap can be described by thermal excitation to broadened…
Using the Chalker-Coddington network model as a drastically simplified, but universal model of integer quantum Hall physics, we investigate the plateau-to-insulator transition at strong magnetic field by means of a real-space…
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the…
We discuss the quantum Hall effect on a single-layer graphene in the framework of noncommutative (NC) phase space. We find it induces a shift in the Hall resistivity. Furthermore, comparison with experimental data reveals an upper bound on…
By taking into account the charge and spin orderings and the exchange interactions between all the Landau levels, we investigate the integer quantum Hall effect of electrons in graphene using the mean-field theory. At the fillings $\nu =…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…
We show through both theoretical arguments and numerical calculations that graphene discerns an unconventional sequence of quantized Hall conductivity, when subject to both magnetic fields (B) and strain. The latter produces time-reversal…
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents…