Related papers: Resistive switching in nanogap systems on SiO2 sub…
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we…
We report a significant change in friction of a $\rm La_{0.55}Ca_{0.45}MnO_3$ thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at room temperature by friction force microscopy. While…
We report design of a high static performance on-off optical switch using nanoscale phase change material Ge2Sb2Te5 embedded into silicon-on-insulator waveguide. This active material can be switched between amorphous and crystalline states…
We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off…
We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend…
The temporary resistance triggered by phase slip will result in the switching of superconductor nanowire to a permanent normal state, decreasing the switching current. In this letter, we propose an improved impedance matching circuit that…
We report a technique which allows self-assembly of conducting nanoparticles into long continuous chains. Transport properties of such chains have been studied at low temperatures. At low bias voltages, the charges are pinned and the chain…
Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various…
Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is…
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching…
Thin nanowires of silicon oxide were studied by pseudopotential density functional electronic structure calculations using the generalized gradient approximation. Infinite linear and zigzag Si-O chains were investigated. A wire composed of…
The electronic structures of zig-zag and arm-chair single-walled carbon nanotubes interacting with a transitional-metal atomic nanowire of Ni have been determined. The Ni nanowire creates a large electron density of states (DOS)at the Fermi…
We have investigated the confinement of 3-D vortices in specific cases of Type-II ($\kappa = 2$) nano-superconducting devices. The emergent pattern of vortices greatly depends on the orientation of an applied magnetic field (transverse or…
The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the…
We predict the existence of new two dimensional silicon carbide nanostructure employing ab initio density-functional theory calculations. These structures are composed of tetragonal and hexagonal rings with C-C and Si-C bonds arranged in a…
We report a detailed study of neuromorphic switching behaviour in inherently complex percolating networks of self-assembled metal nanoparticles. We show that variation of the strength and duration of the electric field applied to this…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
A comprehensive investigation of the electronic and magnetic properties of NaOsO3 has been made using the first principle calculations, in order to understand the importance of Coulomb interaction, spin-orbit coupling and magnetic order in…
NaAlSi is a quasi-two-dimensional semimetal with superconductivity below Tc = 6.8 K and a band structure characterized by nodal lines near the Fermi level and potential topological surface states. Electrical resistivity measurements on its…