Related papers: Strain sensing with sub-micron sized Al-AlOx-Al tu…
We present a computational study of the adhesive and structural properties of the Al/Al2O3 interfaces as building blocks of the Metal-Insulator-Metal (MIM) tunnel devices, where electron transport is accomplished via tunnelling mechanism…
While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for…
We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal-insulating- superconducting or superconducting-insulating-superconducting tunnel junctions. We use atomic layer depo- sition and an…
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is…
Superconducting tunnel junctions are being developed for application as photon detectors in astronomy. We present the latest results on the development of very high quality, very low critical temperature junctions, fabricated out of pure Al…
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
We present a set of experiments to optimize the performance of the noninvasive thermometer based on proximity superconductivity. Current through a standard tunnel junction between an aluminum superconductor and a copper electrode is…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
The recent proposal of altermagnetism has drawn widespread attention to antiferromagnet (AFM) exhibiting spin splitting, extending beyond the realm of sign-alternating spin splitting in momentum space protected solely by rotational…
We study from first principles the transport properties of Al/AlOx/Al tunnel junctions. On this basis, we analyze the reliability of two analytical models for the conductance, namely the trapezoid potential barrier model and a tight-binding…
Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found…
Flexible strain gauges with 88% optical transmittance, of reduced graphene oxide (rGO) on poly dimethylsiloxne membranes, are produced form monolayers of graphene oxide assembled into densely packed sheets at an immiscible hexane/water…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…
Emerging altermagnets with zero net magnetic moment and moment-dependent spin splitting offer a promising avenue for antiferromagnetic spintronic devices, yet their integration into magnetic tunnel junctions has been hindered by reliance on…
We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals…
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…
Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limited. Using scanning tunneling microscopy, we investigate…
The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the…
Sandwich-type MgB2 Josephson tunnel junctions (MgB2/AlOx/MgB2) have been fabricated using as-grown MgB2 films formed by molecular beam epitaxy. The junctions exhibited substantial supercurrent and a well-defined superconducting gap…