We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal-insulating- superconducting or superconducting-insulating-superconducting tunnel junctions. We use atomic layer depo- sition and an aluminum wetting layer to form a nanometer scale insulating barrier on gold films. Electronic transport measurements confirm that single-particle electron tunneling is the dominant transport mechanism, and the measured current-voltage curves demonstrate the viability of using these devices as self-calibrated, low temperature thermometers with a wide range of tunable parameters. The potential for fabricating high performance junction refrigerators is also highlighted.
@article{arxiv.1303.6399,
title = {High quality superconducting tunnel junction barriers using atomic layer deposition},
author = {Stephanie M. Moyerman and Guangyuan Feng and Lisa Krayer and Nathan Stebor and Brian G. Keating},
journal= {arXiv preprint arXiv:1303.6399},
year = {2013}
}
Comments
4 pages, 5 figures - This paper has been withdrawn by the author for edits