Self-shunted Al/AlOx/Al Josephson junctions

S. V. Lotkhov; E. M. Tolkacheva; D. V. Balashov; M. I. Khabipov; F. -I. Buchholz; A. B. Zorin

Self-shunted Al/AlOx/Al Josephson junctions

Mesoscale and Nanoscale Physics 2007-05-23 v1 Superconductivity

Authors: S. V. Lotkhov , E. M. Tolkacheva , D. V. Balashov , M. I. Khabipov , F. -I. Buchholz , A. B. Zorin

Abstract

Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.

Keywords

josephson junctions

Cite

@article{arxiv.cond-mat/0605532,
  title  = {Self-shunted Al/AlOx/Al Josephson junctions},
  author = {S. V. Lotkhov and E. M. Tolkacheva and D. V. Balashov and M. I. Khabipov and F. -I. Buchholz and A. B. Zorin},
  journal= {arXiv preprint arXiv:cond-mat/0605532},
  year   = {2007}
}

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3 pages; 2 figures

Self-shunted Al/AlOx/Al Josephson junctions

Abstract

Keywords

Cite

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