Related papers: A site-controlled quantum dot system offering both…
We demonstrate non-perturbative coupling between a single self-assembled InGaAs quantum dot and an external fiber-mirror based microcavity. Our results extend the previous realizations of tunable microcavities while ensuring spatial and…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over…
We demonstrate how robust entanglement of quantum dot molecular system in a voltage controlled junction can be generated. To improve the quantum information characteristics of this system, we propose an applicable protocol which contains…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
The generation and long-haul transmission of highly entangled photon pairs is a cornerstone of emerging photonic quantum technologies, with key applications such as quantum key distribution and distributed quantum computing. However, a…
Ultracold atoms in optical lattices are an important platform for quantum information science, lending itself naturally to quantum simulation of many-body physics and providing a possible path towards a scalable quantum computer. To realize…
Excitons confined to flat semiconductor quantum dots with elliptical cross section are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use…
Using three-dimensional k.p calculation including strain and piezoelectricity, we showed that the size of the quantum dot (QD) in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of…
We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on…
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such…
A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…
Entangled photon generation from semiconductor quantum dots via the biexciton-exciton cascade underlies various decoherence mechanisms related to the solid-state nature of the quantum emitters. So far, this has prevented the demonstration…
We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of…
The ability to assemble nanomaterials, such as quantum dots, enables the creation of functional devices that present unique optical and electronic properties. For instance, light-emitting diodes with exceptional color purity can be printed…
The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of…
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb…
Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence…