Related papers: A site-controlled quantum dot system offering both…
Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could…
We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…
The strong confinement of semiconductor excitons in a quantum dot gives rise to atom-like behavior. The full benefit of such a structure is best observed in resonant excitation where the excited state can be deterministically populated and…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting…
We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with…
The spectral properties of one exciton trapped in a self-assembled multi-layered quantum dot is obtained using a high precision variational numerical method. The exciton Hamiltonian includes the effect of the polarization charges, induced…
In this work, we present and evaluate a (111)-rotated eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along…
Detailed theoretical study of the magneto-optical properties of weakly confining GaAs/AlGaAs quantum dots is provided. We focus on the diamagnetic coefficient and the $g$-factor of the neutral and the charged excitonic states, respectively,…
Quantum dots play a promising role in the development of novel optical and biosensing devices. In this study, we investigated steady-state and time-dependent luminescence properties of InGaP/ZnS core/shell colloidal quantum dots in a…
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier…
Physical implementations of large-scale quantum processors based on solid-state platforms benefit from realizations of quantum bits positioned in regular arrays. Self-assembled quantum dots are well-established as promising candidates for…
We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature,…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time…
We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances.…
In this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with…