Related papers: Gate tunable charged-phonon effect in bilayer grap…
Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate…
Since their discovery, graphene-based systems represent an exceptional playground to explore the emergence of peculiar quantum effects. The present paper focuses on the anomalous appearence of strong infrared phonon resonances in the…
We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two…
Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching…
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are…
Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G-peak hardens and narrows with increasing doping, analogous to the trend seen in graphene…
We study experimentally and theoretically the Fano-shaped phonon peak at 1590 cm$^{-1}$ (0.2 eV) in the in-plane optical conductivity of pristine graphite. We show that the anomalously large spectral weight and the Fano asymmetry of the…
Interference between different possible paths lies at the heart of quantum physics. Such interference between coupled discrete and continuum states of a system can profoundly change its interaction with light as seen in Fano resonance. Here…
Electron-phonon coupling (EPC) in bilayer graphene (BLG) at different doping levels is studied by first-principles calculations. The phonons considered are long-wavelength high-energy symmetric (S) and antisymmetric (AS) optical modes. Both…
We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are…
In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an…
Graphene is known as the strongest 2D material in nature, yet we show that moderate charge doping of either electrons or holes can further enhance its ideal strength by up to ~17%, based on first principles calculations. This unusual…
Moir\'e phonons describe collective vibrations of a moir\'e superlattice produced by long-wavelength relative displacements of the constituent layers. Despite coming from the backfolding of the acoustic phonons of the individual layers,…
In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…
The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the…
We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of…
We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around $B \sim 25$ T which correspond to the range of the fundamental…
We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…
The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to…
We develop an ab initio framework that captures the impact of electron-electron and electron-hole interactions on phonon properties. This enables the inclusion of excitonic effects in the optical phonon dispersions and lifetimes of…