Related papers: Spin polarized electron transport near the Si/SiO2…
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…
Chirally Induced Spin Selectivity (CISS) is a transport phenomenon observed in both linear and non-linear regimes, where the spin-orbit coupling (SOC) acts as the key driver and electron tunneling serves as the dominant mechanism for charge…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined.…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…
There has been recent controversy about the magnitude of spin-flipping in the heavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We propose a resolution of this controversy, and also present evidence for the importance of a…
We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe…
We have theoretically studied the temporal fluctuations and the resulting kinetic noise in the average spin polarization of an electron ensemble drifting in a quantum wire under a high electric field. Electrons are initially injected in the…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure.…
Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in…
Spin-orbit interactions in two-dimensional electron liquids are responsible for many interesting transport phenomena in which particle currents are converted to spin polarizations and spin currents and viceversa. Prime examples are the spin…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…
Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of…
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle…
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…