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From measurements of the current-perpendicular-to-plane (CPP) total specific resistance (AR = area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2AR(Pd/Ir) = 1.02 +/- 0.06 fOhmm^2, for this…

Materials Science · Physics 2009-11-13 R. Acharyya , H. Y. T. Nguyen , R. Loloee , W. P. Pratt , J. Bass , Shuai Wang , Ke Xia

We compare specific resistances (AR equals area A times resistance R) of sputtered Pd/Pt interfaces measured in two different ways with no-free-parameter calculations. One way gives 2AR(Pd/Pt) of 0.29 (0.03) fohm-m(2) and the other 0.17…

Materials Science · Physics 2009-11-11 S. K. Olson , R. Loloee , N. Theodoropoulou , W. P. Pratt , J. Bass

While intermetallic (IM)-metal interfaces in metallic alloys are critical for tuning mechanical properties, they can also act as failure sites, underscoring the importance of determining their strength. This study reports on a novel…

We present a theoretical study on interfacial magnetocrystalline anisotropy for Fe/MgAl$_2$O$_4$. This system has a very small lattice mismatch at the interface and therefore is suitable for realizing a fully coherent ferromagnet/oxide…

Materials Science · Physics 2018-12-31 Keisuke Masuda , Yoshio Miura

We report the first ever accurate theoretical prediction of thermal conductance of any material interface. Thermal interfacial conductance of aluminum (Al)-sapphire ({\alpha}-Al2O3) interface along crystal directions (111) Al || (0001)…

The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$\Omega…

Mesoscale and Nanoscale Physics · Physics 2014-08-27 K. M. Masum Habib , Somaia S. Sylvia , Supeng Ge , Mahesh Neupane , Roger K. Lake

The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such…

Mesoscale and Nanoscale Physics · Physics 2022-05-25 Qichen Song , Jiawei Zhou , Gang Chen

Using density functional theory (DFT) based first principles calculations, we show that the preferred interfacial plane orientation relationship is determined by the strength of bonding at the interface. The thermodynamic stability, and the…

Materials Science · Physics 2016-06-29 S. K. Yadav , R. Ramprasad , J. Wang , A. Misra , X. -Y. Liu

Magnetocrystalline anisotropy at Heusler alloy$|$MgO interfaces have been studied using first principles calculations. It is found that Co terminated Co$_{2}$FeAl$|$MgO interfaces show perpendicular magnetic anisotropy up to 1.31 mJ/m$^2$,…

Materials Science · Physics 2016-09-19 Rajasekarakumar Vadapoo , Ali Hallal , Hongxin Yang , Mairbek Chshiev

The air-water interface is a highly prevalent phase boundary with a far-reaching impact on natural and industrial processes. Water molecules behave differently at the interface compared to the bulk, exhibiting anisotropic orientational…

We measured the magnetoresistance of the 2D electron liquid formed at the (111) LaAlO$_3$/SrTiO$_3$ interface. The hexagonal symmetry of the interface is manifested in a six-fold crystalline component appearing in the anisotropic…

Strongly Correlated Electrons · Physics 2017-06-14 P. K. Rout , I. Agireen , E. Maniv , M. Goldstein , Y. Dagan

We introduce a minimal interface-scattering mechanism that produces a sizable anisotropic magnetoresistance (AMR) in metal/ferromagnet bilayers (e.g., Pt/YIG) without invoking bulk spin or orbital Hall currents. In a $\delta$-layer model…

Mesoscale and Nanoscale Physics · Physics 2025-10-17 Ivan Iorsh , Mikhail Titov

Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage and Thermal Dielectric Relaxation Current measurements, the…

Materials Science · Physics 2007-05-23 Marc Avice , Ulrike Grossner , Ioana Pintilie , Bengt G. Svensson , Ola Nilsen , Helmer Fjellvag

We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular…

Materials Science · Physics 2018-04-18 Andres Conca , Alessia Niesen , Günter Reiss , Burkard Hillebrands

As devices are reduced in size, interfaces start to dominate electrical transport making it essential to be able to describe reliably how they transmit and reflect electrons. For a number of nearly perfectly lattice-matched materials, we…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 P. X. Xu , K. Xia , M. Zwierzycki , M. Talanana , P. J. Kelly

We study the effect of interface disorder on the spin-dependent interface resistances of Co/Cu, Fe/Cr and Au/Ag multilayers using a newly developed method for calculating transmission matrices from first-principles. The efficient…

Materials Science · Physics 2009-10-31 K. Xia , P. J. Kelly , G. E. W. Bauer , I. Turek , J. Kudrnovský , V. Drchal

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…

Mesoscale and Nanoscale Physics · Physics 2015-02-17 Song-Lin Li , K. Komatsu , Shu Nakaharai , Yen-Fu Lin , M. Yamamoto , X. F. Duan , K. Tsukagoshi

The anisotropy of electrical resistivity was measured in parent compounds of the iron-arsenic high temperature superconductors, AEFe2As2 with Alkali Earth elements AE=Ca,Sr, Ba. Measurements were performed using both the Montgomery…

Superconductivity · Physics 2015-05-13 M. A. Tanatar , N. Ni , G. D. Samolyuk , S. L. Bud'ko , P. C. Canfield , R. Prozorov

Interfaces have long been known to be the key to many mechanical and electric properties. To nickel base superalloys which have perfect creep and fatigue properties and have been widely used as materials of turbine blades, interfaces…

Materials Science · Physics 2012-07-25 Binghui Ge , Jing Zhu

Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C)…

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