Related papers: Coulomb explosion sputtering of selectively oxidiz…
Theoretical continuum models that describe the formation of patterns on surfaces of targets undergoing ion-beam sputtering, are based on Sigmund's formula, which describes the spatial distribution of the energy deposited by the ion. For…
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show…
We present a measurement of multiple Coulomb scattering of 1 to 6 GeV/c electrons in thin (50-140 um) silicon targets. The data were obtained with the EUDET telescope Aconite at DESY and are compared to parametrisations as used in the…
Recent high precision experimental data for heavy-ion fusion reactions at subbarrier energies systematically show that a surprisingly large surface diffuseness parameter for a Woods-Saxon potential is required in order to fit the data. We…
In high energy heavy ion collisions and interacting cold atom systems, large elliptic flow anisotropies have been observed. For the large opacity ($\rho\sigma L\sim 10^{3}$) of the latter hydrodynamics is a natural consequence, but for the…
We report on experimental results obtained from collisions of slow highly charged Ar9+ ions with a carbon monoxide dimer (CO)2 target. A COLTRIMS setup and a Coulomb explosion imaging approach are used to reconstruct the structure of the CO…
In 129 Xe+ nat Sn central collisions from 8 to 25 MeV/A, the three-fragment exit channel occurs with a significant cross section. We show that these fragments arise from two successive binary splittings of a heavy composite system. The…
Scattering of two spinless charge particles for simple forces including coulomb admixtures is calculated without partial wave decomposition. The coulomb interaction being taken is of the type of screened coulomb potential. For the forces…
The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage…
Erosion of surface atoms of solid materials by ion bombardment (surface-sputtering) causes nano-ripples and quantum dots to self-organise on the surfaces. The self-organisation had been shown, in some sputtering experiments, to be…
Based on an approach recently proposed by us, simultaneous $\chi^{2}$-analyses are performed for elastic scattering, direct reaction (DR) and fusion cross sections data for the $^{6}$He+$^{209}$Bi system at near-Coulomb-barrier energies to…
The scattering of photons of x-ray energy off a Coulomb field in very forward scattering region may be thought as the refraction effect due to the Coulomb field. The cross section of the scattering can be computed from the photon bending…
The results of inelastic neutron scattering provide a solution for the crystal field level scheme in PrOs4Sb12 in which the ground state in the cubic crystal field potential of Th symmetry is a Gamma_1 singlet. The conduction electron mass…
Based on the extended optical model approach in which the polarization potential is decomposed into direct reaction (DR) and fusion parts, simultaneous $\chi^{2}$ analyses are performed for elastic scattering and fusion cross section data…
Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron…
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…
Accurate elastic scattering angular distribution data measured at bombarding energies just above the Coulomb barrier have shapes that can markedly differ from or be the same as the expected classical Fresnel scattering pattern depending on…
Control of the Coulomb interaction between single electrons is vital for realizing quantum information processing using flying electrons and, particularly, for the realization of deterministic two-qubit operations. Since the strength of the…
The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations…
Fragmentation of highly charged molecular ions or clusters consisting of more than two atoms can proceed in an onestep synchronous manner where all bonds break simultaneously or sequentially by emitting one ion after the other. We separated…