Coulomb Drag for Strongly Localized Electrons: Pumping Mechanism
Mesoscale and Nanoscale Physics
2009-11-07 v1
Abstract
The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage drop in the passive layer, when a current is passed through the active layer. We find that the microscopic origin of drag lies in the time correlations of the occupation numbers of the sites involved in a hop. These correlations are neglected within the conventional Miller-Abrahams scheme for calculating the hopping resistance.
Keywords
Cite
@article{arxiv.cond-mat/0204426,
title = {Coulomb Drag for Strongly Localized Electrons: Pumping Mechanism},
author = {M. E. Raikh and Felix von Oppen},
journal= {arXiv preprint arXiv:cond-mat/0204426},
year = {2009}
}
Comments
5 pages, 3 figures