English

Coulomb drag in compressible quantum Hall states

Mesoscale and Nanoscale Physics 2016-08-31 v1

Abstract

We consider the Coulomb drag between two layers of two-dimensional electronic gases subject to a strong magnetic field. We first focus on the case in which the electronic density is such that the Landau level filling fraction ν\nu in each layer is at, or close to, ν=1/2\nu=1/2. Discussing the coupling between the layers in purely electronic terms, we show that the unique dependence of the longitudinal conductivity on wave-vector, observed in surface acoustic waves experiments, leads to a very slow decay of density fluctuations. Consequently, it has a crucial effect on the Coulomb drag, as manifested in the transresistivity ρD\rho_D. We find that the transresistivity is very large compared to its typical values at zero magnetic field, and that its temperature dependence is unique -- ρDT4/3\rho_D \propto T^{4/3}. For filling factors at or close to 1/41/4 and 3/43/4 the transresistivity has the same TT-dependence, and is larger than at ν=1/2\nu = 1/2. We calculate ρD\rho_D for the ν=3/2\nu=3/2 case and propose that it might shed light on the spin polarization of electrons at ν=3/2\nu=3/2. We compare our results to recent calculations of ρD\rho_D at ν=1/2\nu=1/2 where a composite fermion approach was used and a T4/3T^{4/3}-dependence was obtained. We conclude that what appears in the composite fermion language to be drag induced by Chern-Simons interaction is, physically, electronic Coulomb drag.

Keywords

Cite

@article{arxiv.cond-mat/9701135,
  title  = {Coulomb drag in compressible quantum Hall states},
  author = {Iddo Ussishkin and Ady Stern},
  journal= {arXiv preprint arXiv:cond-mat/9701135},
  year   = {2016}
}

Comments

11 pages, REVTeX with two Postscript figures