Related papers: Coulomb explosion sputtering of selectively oxidiz…
We show that the spin-orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for the bound states formation. The mechanism can be realized in 2D materials with sufficiently strong Rashba…
The elastic scattering angular distribution of the $^{16}$O$+^{60}$Ni system at $260$ MeV was measured in the range of the Rutherford cross section down to $7$ orders of magnitude below. The cross sections of the lowest $2^{+}$ and $3^{-}$…
The Cu K-edge resonant inelastic x-ray scattering (RIXS) spectrum in one-dimensional insulating cuprates is theoretically examined by using the exact diagonalization technique for the extended one-dimensional Hubbard model with nearest…
The Moliere theory of multiple Coulomb scattering is modified to take into account difference between scattering off atomic nuclei and electron. A simple analytical expression for angular distribution of charged particles passing through a…
We consider an analytic approach to the elucidation of the role played by Coulomb interaction in the formation of the spectrum and angular distributions of the electrons produced by above threshold ionization of the atoms. Our approach is…
We study the quantum scattering problem of three three-dimensional charged particles involving pair potentials of Coulomb attraction in the framework of the diffraction approach. We present for the first time the quantitative description of…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…
Recent experiments performed on weakly pinched quantum point contacts, have shown a resistance that tend to decrease at low source drain voltage. We show that enhanced Coulomb interactions, prompt by the presence of the point contact, may…
To leading order in displacement size, the scattering of electrons in a Cu-O plane from O displacements perpendicular to that plane is due to spin-orbit coupling. This scattering is investigated with the following results: (1) As a…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…
The Spin-Orbit Proximity Effect is the raise of Spin-Orbit Coupling at a layer near to the interface with a strong spin-orbit material. It has been seen in several system such as graphene and ferromagnetic layers. The control of the…
Asymmetric scanning tunneling microscopy (STM) of the CuO2 plane of Ca2-xNaxCuO2Cl2, x = 0.125, shows a square domain structure with edge length four times the compound's lattice constant a0 (Cu-O-Cu distance). The domain structure is a…
We report on electron removal calculations for 2.81 keV/amu Li$^{3+}$ and O$^{3+}$ ion collisions with neon dimers. The target is described as two independent neon atoms fixed at the dimer's equilibrium bond length, whose electrons are…
The study of Coulomb excitation of 11Be to the first excited state in intermediate energy collisions with heavy targets is presented. The existing experimental data are reanalised by including the probability of projectile survival into the…
Particle-in-cell (PIC) simulations were performed to study the impact of Coulomb scattering on the performance of argon plasma based thermionic converters. Using a simplified model, studies from the 1970's have concluded that plasma…
The self-sputtering yield of the (100) face-centered cubic (fcc) crystal surface consisting of particles interacting with the Lennard-Jones (LJ) potential is presented as a function of the normalized incident particle kinetic energy for…
We study the disorder potential induced by random Coulomb impurities at the surface of a topological insulator (TI). We use a simple model in which positive and negative impurities are distributed uniformly throughout the bulk of the TI,…
We consider the low-energy, long-wave-length excitations of a reconstructed quantum-Hall edge where three branches of chiral one-dimensional edge excitations exist. We find that, in addition to forward scattering between the three…
The relationship between the backward elastic scattering probabilities and reaction cross sections is derived. This is a a very simple and useful method to extract reaction cross sections for heavy ion systems. We compare the results of our…
The effect of carrier multiplication (CM) in semiconductor nanocrystals is systematically treated by employing an exciton scattering approach. Using projection operators, we reduce the Coulomb coupled multi-exciton dynamics to scattering…