Related papers: Insulator to semi-metal transition in graphene oxi…
Electrons in graphene aligned with hexagonal boron nitride are modelled by Dirac fermions in a correlated random-mass landscape subject to a scalar- and vector-potential disorder. We find that the system is insulating in the commensurate…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
The mobility of graphene transferred on a SiO2/Si substrate is limited to ~10,000 cm2/Vs. Without understanding the graphene/SiO2 interaction, it is difficult to improve the electrical transport properties. Although surface structures on…
We propose an extensive report on the simulation of electronic transport in 2D graphene in presence of structural defects. Amongst the large variety of such defects in sp$^2$ carbon-based materials, we focus on the Stone-Wales defect and on…
With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of two-dimensional…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for…
Reduced graphene oxide (rGO) is a bulk-processable quasi-amorphous 2D material with broad spectral coverage and fast electronic response. rGO sheets are suspended in a polymer matrix and sequentially photoreduced while measuring the…
We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent…
While graphene is a semi-metal, a recently synthesized hydrogenated graphene called graphane, is an insulator. We have probed the transformation of graphene upon hydrogenation to graphane within the framework of density functional theory.…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
Motivated by the possibility of a strain tuning effect on electronic properties of graphene, the semimetal-Mott insulator transition process on the uniaxial honeycomb lattice is numerically studied using Determinant Quantum Monte Carlo. As…
Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge.…
We investigate the magnetotransport properties of a thin graphite wire resting on a silicon oxide substrate. The electric field effect is demonstrated with back and side gate electrodes. We study the conductance fluctuations as a function…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
Two-dimensional (2D) materials offer a prospect of membranes that combine negligible gas permeability with high proton conductivity and could outperform the existing proton exchange membranes used in various applications including fuel…
We present a trajectory-resolved framework for charge transport in graphene and related two-dimensional carbon systems beyond the ideal ballistic and fully coherent limits. Transport is described by kinetic Monte Carlo hopping on a…
Due to their graphene-like properties after oxygen reduction, incorporation of graphene oxide (GO) sheets into correlated-electron materials offers a new pathway for tailoring their properties. Fabricating GO nanocomposites with…