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Active research in nanotechnology contemplates the use of nanomaterials for engineering applications. However, a primary challenge is understanding the effects of nanomaterial properties on industrial device performance and translating…

We utilized the momentum transfer(Q)-dependence of Quasi-Elastic Neutron Scattering (QENS) to reveal the dynamics of water and ethanol confined in Graphene Oxide (GO) powder or membranes at different temperatures and in different…

Soft Condensed Matter · Physics 2021-12-20 Gobin R. Acharya , Madhusudan Tyagi , Eugene Mamontov , Peter M. Hoffmann

Graphene oxide (GO) is one of chemically modified graphenes and has been extensively investigated worldwide. A monolayer sheet of GO can be chemically produced in solution and it has been expected to be adaptable to a wide variety of…

Materials Science · Physics 2011-02-11 Yoshio Kanamori , Seiji Obata , Koichiro Saiki

Previous studies indicate that the properties of graphene oxide (GO) can be significantly improved by enhancing its graphitic domain size through thermal diffusion and clustering of functional groups. Remarkably, this transition takes place…

Hydration properties of graphene oxide (GO) are essential for most of its potential applications. In this work, we employ atomistic molecular dynamics simulations to investigate seven GO compositions with different levels of oxygenation.…

Materials Science · Physics 2018-02-14 Antenor Neto , Vitaly V. Chaban , Eudes E. Fileti

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…

Strongly Correlated Electrons · Physics 2009-10-30 P. T. Coleridge , R. L. Williams , Y. Feng , P. Zawadzki

In the current study, mechanical characteristics of graphene oxide (GO) as a promising substitute of graphene are systematically studied through molecular dynamics simulation. For this purpose, several GO samples having different…

Materials Science · Physics 2020-07-03 Mahdi Tavakol , Abbas Montazeri , S. Hamed Aboutalebi , Reza Asgari

We show that the presence of electrically insulating graphite oxide (GO) within a single wall carbon nanotube network strongly enhances electrical conductivity, whereas reduced graphite oxide, even though electrically conductive, suppresses…

Efficient heat management and control in optical devices, facilitated by advanced thermo-optic materials, is critical for many applications such as photovoltaics, thermal emitters, mode-locked lasers, and optical switches. Here, we…

Optics · Physics 2024-06-26 David J. Moss

The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 K. I. Bolotin , K. J. Sikes , J. Hone , H. L. Stormer , P. Kim

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

Mesoscale and Nanoscale Physics · Physics 2011-01-19 Haomin Wang , Yihong Wu , Chunxiao Cong , Jingzhi Shang , Ting Yu

The ability to tune charge storage properties of graphene oxide (GO) is of utmost importance for energy conversion applications. Here we show that electrochemical reduction of GO is highly sensitive to the cations present in the solution.…

Materials Science · Physics 2018-09-05 Dalibor Karačić , Selma Korać , Igor A. Pašti , Sanjin J. Gutić

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to…

Mesoscale and Nanoscale Physics · Physics 2013-02-22 Sharnali Islam , Zuanyi Li , Vincent E. Dorgan , Myung-Ho Bae , Eric Pop

We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment. We demonstrate that the supporting substrate plays a crucial…

The structural and electronic properties of oxidized graphene are investigated on the basis of the genetic algorithm and density functional theory calculations. We find two new low energy semiconducting phases of the fully oxidized graphene…

Materials Science · Physics 2010-01-05 H. J. Xiang , Su-Huai Wei , X. G. Gong

The zero-field temperature-dependence of the resistivity of two-dimensional holes are observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called…

Strongly Correlated Electrons · Physics 2007-12-20 Jian Huang , J. S. Xia , D. C. Tsui , L. N. Pfeiffer , K. W. West

Heterostructures comprising of silicon (Si), molybdenum disulfide (MoS${_2}$) and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage (I-V) characteristics exhibit temperature…

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

Materials Science · Physics 2008-05-11 S. Adam , S. Das Sarma

Since the discovery of graphene oxide (GO), the most accessible of the precursors of graphene, this material has been widely studied for applications in science and technology. In this work, we describe a procedure to obtain GO dispersions…

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…

Mesoscale and Nanoscale Physics · Physics 2012-07-26 X. Hong , K. Zou , A. M. DaSilva , C. H. Ahn , J. Zhu