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Transport measurements of the two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ interface have found a density of carriers much lower than expected from the "polar catastrophe" arguments. From a detail density-functional study,…

Materials Science · Physics 2008-12-09 Zoran S. Popović , Sashi Satpathy , Richard M. Martin

With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly…

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{\deg}C exhibit the…

Materials Science · Physics 2015-03-20 A. Fête , C. Cancellieri , D. Li , D. Stornaiuolo , A. D. Caviglia , S. Gariglio , J. -M. Triscone

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016 cm-2 and a mobility around 104…

The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with…

We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to…

Mesoscale and Nanoscale Physics · Physics 2016-06-22 A. Faridi , R. Asgari , A. Langari

Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown…

Strongly Correlated Electrons · Physics 2015-06-17 Z. Huang , X. Renshaw Wang , Z. Q. Liu , W. M. Lü , S. W. Zeng , A. Annadi , W. L. Tan , X. P. Qiu , Y. L. Zhao , M. Salluzzo , J. M. D. Coey , T. Venkatesan , Ariando

We have performed high field magnetotransport measurements to investigate the interface electron gas in LaAlO3/SrTiO3 heterostructures. Shubnikov-de Haas oscillations reveal several 2D conduction subbands with carrier effective masses…

The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18…

Mesoscale and Nanoscale Physics · Physics 2015-03-31 A. Jost , V. K. Guduru , S. Wiedmann , J. C. Maan , U. Zeitler , S. Wenderich , A. Brinkman , H. Hilgenkamp

A two-dimensional electron liquid is formed at the n-type interface between SrTiO3 and LaAlO3. Here we report on Kelvin probe microscopy measurements of the electronic compressibility of this electron system. The electronic compressibility…

Strongly Correlated Electrons · Physics 2012-08-14 V. Tinkl , M. Breitschaft , C. Richter , J. Mannhart

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the…

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

Nanoscale channels realized at the conducting interface between LaAlO$_{3}$ and SrTiO$_{3}$ provide a perfect playground to explore the effect of dimensionality on the electronic properties of complex oxides. Here we compare the electric…

We build a theoretical model for the electronic properties of the two-dimensional (2D) electron gas that forms at the interface between insulating SrTiO$_3$ and a number of polar cap layers, including LaTiO$_3$, LaAlO$_3$, and GdTiO$_3$.…

Strongly Correlated Electrons · Physics 2017-02-13 Amany Raslan , Patrick Lafleur , W. A. Atkinson

A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate…

Materials Science · Physics 2015-06-18 M. Foerster , R. Bachelet , V. Laukhin , J. Fontcuberta , G. Herranz , F. Sanchez

The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence,…

Strongly Correlated Electrons · Physics 2013-12-10 C. Barone , F. Romeo , S. Pagano , E. Di Gennaro , F. Miletto Granozio , I. Pallecchi , D. Marre , U. Scotti di Uccio

The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to…

Strongly Correlated Electrons · Physics 2013-06-19 G. Berner , M. Sing , H. Fujiwara , A. Yasui , Y. Saitoh , A. Yamasaki , Y. Nishitani , A. Sekiyama , N. Pavlenko , T. Kopp , C. Richter , J. Mannhart , S. Suga , R. Claessen

Magnetotransport measurements of charge carriers at the interface of a LaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistance and magnetoresistance which at low and high temperatures is described by a single channel…

Materials Science · Physics 2015-03-31 V. K. Guduru , A. McCollam , A. Jost , S. Wenderich , H. Hilgenkamp , J. C. Maan , A. Brinkman , U. Zeitler

We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi…

We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3…

Materials Science · Physics 2013-05-29 Y. C. Liao , T. Kopp , C. Richter , A. Rosch , J. Mannhart
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