English

Direct k-space mapping of the electronic structure in an oxide-oxide interface

Strongly Correlated Electrons 2013-06-19 v2 Materials Science

Abstract

The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir.

Keywords

Cite

@article{arxiv.1301.2824,
  title  = {Direct k-space mapping of the electronic structure in an oxide-oxide interface},
  author = {G. Berner and M. Sing and H. Fujiwara and A. Yasui and Y. Saitoh and A. Yamasaki and Y. Nishitani and A. Sekiyama and N. Pavlenko and T. Kopp and C. Richter and J. Mannhart and S. Suga and R. Claessen},
  journal= {arXiv preprint arXiv:1301.2824},
  year   = {2013}
}

Comments

8 pages, 6 figures, incl. Supplemental Information

R2 v1 2026-06-21T23:08:34.883Z