Related papers: Sensitivity of spin-torque diodes for frequency-tu…
Investigations into the propagation characteristics, specifically loss and wave velocity, of superconducting coplanar waveguides and microstrip lines were conducted at a 2 mm wavelength. This was achieved through the measurement of on-chip…
Current-biased Josephson junctions can act as detectors of electromagnetic radiation. At optimal conditions, their sensitivity is limited by fluctuations causing stochastic switching from the superconducting to the resistive state. This…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
We present a design for a tunneling-current-assisted scanning near-field microwave microscope. For stable operation at cryogenic temperatures, making a small and rigid microwave probe is important. Our coaxial resonator probe has a length…
We calculate the tunneling magnetoresistance (TMR) of Fe$\mid$ZnSe$\mid$Fe$\mid$ZnSe$\mid$Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of…
Magnetic Tunnel Junction devices find use in several applications based on the exploitation of the Spin-Transfer Torque phenomenon. The Ferromagnetic Resonance curve is a key characteristic of any Magnetic Tunnel Junctions. It is usually…
We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
Electron-spin resonance carried out with scanning tunneling microscopes (ESR-STM) is a recently developed experimental technique that is attracting enormous interest on account of its potential to carry out single-spin on-surface resonance…
Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…
We use an atomic vapor cell as a frequency tunable microwave field detector operating at frequencies from GHz to tens of GHz. We detect microwave magnetic fields from 2.3 GHz to 26.4 GHz, and measure the amplitude of the sigma+ component of…
The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction…
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However,…
Spin-polarized scanning tunneling microscopy (SP-STM) measures tunnel magnetoresistance (TMR) with atomic resolution. While various methods for achieving SP probes have been developed, each is limited with respect to fabrication,…
As scanning tunneling microscopy is pushed towards fast local dynamics, a quantitative understanding of tunnel junctions under the influence of a fast AC driving signal is required, especially at the ultra-low temperatures relevant to spin…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…